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參數資料
| 型號： | AT-31011-BLKG |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-4 |
| 文件頁數： | 3/10頁 |
| 文件大?。?/td> | 257K |
| 代理商： | AT-31011-BLKG |
2
AT-31011, AT-31033 Absolute Maximum Ratings
Symbol
Parameter
Units
Absolute Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
11
VCEO
Collector-Emitter Voltage
V
5.5
IC
Collector Current
mA
16
PT
Power Dissipation[2,3]
mW
150
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. TMounting Surface = 25°C.
3. Derate at 1.82 mW/°C for TC > 67.5°C.
Electrical Specifications, TA = 25°C
AT-31011
AT-31033
Symbol
Parameters and Test Conditions
Units
Min
Typ
Max
Min
Typ
Max
NF
Noise Figure
VCE = 2.7 V, IC = 1 mA
f = 0.9 GHz
dB
0.9[1]
1.2[1]
0.9[2]
1.2[2]
GA
Associated Gain
VCE = 2.7 V, IC = 1 mA
f = 0.9 GHz
dB
11[1]
13[1]
9[2]
11[2]
hFE
Forward Current
VCE = 2.7 V
-
70
300
70
300
Transfer Ratio
IC = 1 mA
ICBO
Collector Cutoff Current
VCB = 3 V
A
0.05
0.2
0.05
0.2
IEBO
Emitter Cutoff Current
VEB = 1 V
A
0.1
1.5
0.1
1.5
Notes:
1. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.4 dB; output loss = 0.4 dB.
2. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.4 dB; output loss = 0.4 dB.
Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a Compromise Match Between Best Noise Fig-
ure, Best Gain, Stability, a Practical, Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and AT-310
Geometries.
AT-31011 fig 1
1000 pF
VBB
W = 10 L = 1860
W = 10 L = 1000
W = 30 L = 100
W = 10 L = 1860
1000 pF
VCC
25
W = 10 L = 1025
TEST CIRCUIT A: W = 20 L = 100
TEST CIRCUIT B: W = 20 L = 200 x 2
NOT TO SCALE
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (
ε = 4.8)
DIMENSIONS IN MILS
Thermal Resistance[2]:
θjc = 550°C/W
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| AT-31033-TR1G | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-31011-TR1G | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-31033-TR2G | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-31033-BLK | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-31011-TR1 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AT31011TR1 | 制造商:Hewlett Packard Co 功能描述: |
| AT-31011-TR1 | 制造商:HEWLETT 功能描述: |
| AT-31011-TR1G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-31011-TR2G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT310-22/23-4 | 制造商:Block USA Inc. 功能描述:3 phase autotransformer,220-400V 10kVA |
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