參數(shù)資料
型號(hào)： ASJE1700R550SY-EL
廠商： MICROSS COMPONENTS
元件分類： JFETs
英文描述： 4 A, 1700 V, 0.55 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA
封裝： HERMETIC SEALED, TO-257, 3 PIN
文件頁數(shù)： 4/7頁
文件大小： 263K
代理商： ASJE1700R550SY-EL
SiC JFET
ASJE1700R550
ASJE1700R550
Rev. 0.0 12/10
Micross Components reserves the right to change products or specications without notice.
4
ADVANCED INFORMATION
Figure 7. Drain-Source On-resistance
R
DS(ON) = f(Tj); parameter: IGS
Figure 8. Drain-Source On-resistance
R
DS(ON) = f(IGS); Tj = 25
oC
0.420
0.430
0.440
0.450
0.460
0.470
0.480
0.490
0.500
0.1
1.0
10.0
100.0
IGS, Gate-Source Current (mA)
R
DS(on)
,Drai
n
-S
o
u
rce
On
-resi
stan
ce
(
)
10mA
100mA
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
0
50
100
150
200
Tj, Junction Temperature (°C)
R
DS(on)
,Drai
n
-S
o
u
rce
On
-resi
stan
ce
(
)
Figure 9. Typical Capacitance
C = f(V
DS); VGS = 0 V; f = 1 MHz
Figure 10. Gate Charge
Q
g = f(VGS); VDS = 900V; ID = 3A, Tj = 25
oC
1
10
100
1000
0
300
600
900
1200
1500
1800
VDS, Drain-Source Voltage (V)
C,
Capaci
tance
(pF)
Crss
Coss
Ciss
0.0
0.5
1.0
1.5
2.0
2.5
3.0
024
68
10
12
Qg, Total Gate Charge (nC)
V
GS
,Gate-Source
Voltage
(V)
Typical
Max
0.50
0.75
1.00
1.25
1.50
0
50
100
150
200
Tj, Junction Temperature (
oC)
V
TH
,Gate
Threshold
Voltage
(V)
-1.5mV/
oC
25
oC
125
oC
175
oC
5E-06
1E-05
2E-05
3E-05
4E-05
0
500
1000
1500
2000
BVDS, Drain-Source Blocking Voltage (V)
I D
,Drain
Leakage
Current
(A)
Figure 11. Gate Threshold Voltage
V
th = f(Tj), normalized
Figure 12. Drain-Source Leakage
I
D = f(VDS); VGS = 0V; parameter: Tj
相關(guān)PDF資料
PDF描述
ASJE1700R550SY-EL/V 4 A, 1700 V, 0.55 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA
ASJE1700R550Y-EL/V 4 A, 1700 V, 0.55 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA
ASJE1700R550SY-EX 4 A, 1700 V, 0.55 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA
ASMCC0096-7 200 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
ASMCC0096-13 200 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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