參數(shù)資料
型號： ASJE1700R550SY-EL
廠商： MICROSS COMPONENTS
元件分類： JFETs
英文描述： 4 A, 1700 V, 0.55 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA
封裝： HERMETIC SEALED, TO-257, 3 PIN
文件頁數(shù)： 2/7頁
文件大?。?/td> 263K
代理商： ASJE1700R550SY-EL
SiC JFET
ASJE1700R550
ASJE1700R550
Rev. 0.0 12/10
Micross Components reserves the right to change products or specications without notice.
2
ADVANCED INFORMATION
Min
Typ
Max
Drain Source Blocking Voltage
BVDS
VGS = 0 V, ID = 200 A
1700
V
VDS = 1700 V, VGS = 0 V, Tj = 25
oC
10
200
VDS = 1700 V, VGS = 0 V, Tj = 175
oC
50
1000
VDS = 1700 V, VGS = 15 V,
Tj = 25
oC
10
VDS = 1700 V, VGS = 15 V,
Tj = 175
oC
30
VGS = 15 V, VDS = 0V
0.02
0.1
VGS = 15 V, VDS = 1700V
0.02
ID = 3 A, VGS = 3 V,
Tj = 25 °C
0.45
0.55
ID = 3 A, VGS = 3 V,
Tj = 125 °C
1.08
Gate Threshold Voltage
VGS(th)
VDS = 1 V, ID = 10 mA
1.15
1.4
1.75
V
Gate Forward Current
IGFWD
VGS = 3 V
135
mA
RG
f = 1 MHz, drain source shorted
15
RG(on)
VGS >2.7V; See Figure 5
1
Input Capacitance
Ciss
170
Output Capacitance
Coss
20
Reverse Transfer Capacitance
Crss
17
Effective Output Capacitance,
energy related
Co(er)
VDS = 0 V to 600 V,
VGS = 0 V
20
Turn On Delay
ton
12
Rise Time
tr
14
Turn Off Delay
toff
28
Fall Time
tf
30
Turn On Energy
Eon
41
Turn Off Energy
Eoff
33
Total Switching Energy
Ets
74
Turn On Delay
ton
TBD
Rise Time
tr
TBD
Turn Off Delay
toff
TBD
Fall Time
tf
TBD
Turn On Energy
Eon
TBD
Turn Off Energy
Eoff
TBD
Total Switching Energy
Ets
TBD
Total Gate Charge
Qg
10
Gate Source Charge
Qgs
8
Gate Drain Charge
Qgd
1
VDS = 850 V, ID = 3 A,
Inductive Load, TJ = 150
oC
Gate Driver = +15V unipolar
RgEXT = 20ohm
See Figure 14 for typical gate drive /
inductive load switching circuit.
VDS = 850 V, ID = 3 A,
VGS = + 2.5 V
ns
μJ
ns
μJ
nC
Dynamic Characteristics
VDD = 300 V
pF
Switching Characteristics
VDS = 850 V, ID = 3 A,
Inductive Load, TJ = 25
oC
Gate Driver = +15V unipolar
RgEXT = 20ohm
See Figure 14 for typical gate drive /
inductive load switching circuit.
On Characteristics
Drain Source On resistance
Gate Resistance
RDS(on)
Total Drain Leakage Current
Total Gate Reverse Leakage
IDSS
IGSS
μA
mA
Off Characteristics
Value
Unit
Symbol
Parameter
Conditions
ELECTRICAL CHARACTERISTICS
相關(guān)PDF資料
PDF描述
ASJE1700R550SY-EL/V 4 A, 1700 V, 0.55 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA
ASJE1700R550Y-EL/V 4 A, 1700 V, 0.55 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA
ASJE1700R550SY-EX 4 A, 1700 V, 0.55 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA
ASMCC0096-7 200 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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