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參數(shù)資料
| 型號： | ASITPR175 |
| 廠商： | Advanced Semiconductor, Inc. |
| 英文描述： | NPN SILICON RF-MICROWAVE POWER TRANSISTOR |
| 中文描述： | NPN硅射頻微波功率晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 23K |
| 代理商： | ASITPR175 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
°
C
SYMBOL
BV
CES
I
C
= 20 mA
BV
EBO
I
E
= 5.0 mA
h
FE
V
CE
= 5.0 V I
C
= 20 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
55
UNITS
V
V
---
3.5
10
P
G
VSRW
η
C
V
CE
= 50 V
P
OUT
= 175 W f = 1090 MHz
8.0
9.0
40
00:1
dB
%
NPN SILICON RF-MICROWAVE POWER
TRANSISTOR
TPR175
DESCRIPTION:
The
ASI TPR175
is a common base
transistor Designed for pulsed systems
in the frequency band 1030-1090 MHz.
FEATURES:
Common Base
Internal Matching Network
P
G
= 8.0 dB at 175 W/1090 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
12.5 A
V
CES
55 V
V
EBO
3.5 V
P
DISS
388 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
0.45 °C/W
PACKAGE STYLE
1 = Collector 2 = Base 3 = Emitter
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