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參數(shù)資料
| 型號(hào)： | ASITPV591 |
| 廠商： | Advanced Semiconductor, Inc. |
| 英文描述： | CONN WIRENUT 22-8 AWG GRAY |
| 中文描述： | NPN硅射頻功率晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 23K |
| 代理商： | ASITPV591 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 10 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
22
UNITS
V
BV
CBO
I
C
= 10 mA
45
V
BV
EBO
I
E
= 1.0 mA
3.5
V
h
FE
V
CE
= 5.0 V I
C
= 100 mA
20
200
---
C
ob
V
CB
= 28 V
f = 1.0 MHz
3.0
pF
P
g
Pref = 0.5 W f = 860 MHz
SOUND CARRIER
= -7.0 dB
VISION CARRIER
= -8.0 dB
CHROMA
= -16 dB
13
dB
IMD
Pref = 0.5 W
V
CE
= 20 V I
C
= 150 mA
SOUND CARRIER
=-7.0dB
VISION CARRIER
= -8.0 dB
f = 860 MHz
CHROMA
= -16 dB
-58
dB
NPN SILICON RF POWER TRANSISTOR
TPV591
DESCRIPTION:
The
ASI TPV591
is a Common
Emitter Device Designed for High
Linearity Class A Television Band IV
and V Transmitters.
FEATURES INCLUDE:
Gold Metalization
Emitter Ballasting
MAXIMUM RATINGS
I
C
300 mA
V
CB
45 V
P
DISS
5.3 W @ T
C
= 25
O
C
-55
O
C to +200
O
C
-55
O
C to +200
O
C
33.0
O
C/W
T
J
T
STG
q
JC
PACKAGE STYLE .280 4L STUD
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
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