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參數(shù)資料
| 型號(hào)： | ASINE21935 |
| 廠商： | Advanced Semiconductor, Inc. |
| 英文描述： | NPN SILICON HI FREQUNCY TRANSISTOR |
| 中文描述： | NPN硅晶體管您好FREQUNCY |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 35K |
| 代理商： | ASINE21935 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
I
CBO
V
CB
= 8.0 V
I
EBO
V
EB
= 1.0 V
h
FE
V
CE
= 8.0 V I
C
= 20 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
μA
μ
A
---
1.0
1.0
30
100
300
C
CB
V
CB
= 8.0 V f = 1.0 MHz
0.4
1.0
pF
f
T
V
CE
= 8.0 V I
C
= 20 mA
V
CE
= 8.0 V I
C
= 20 mA f = 1.0 GHz
f = 2.0 GHz
8.0
15.5
9.0
GHz
|S
21E
|
8.0
dB
NPN SILICON HI FREQUNCY TRANSISTOR
NE21935
DESCRIPTION:
The
ASI NE21935
is Designed for
general purpose and small signal
amplifier and oscillator applications up
to 6.0 GHz.
FEATURES INCLUDE:
High frequency 8.0 GH
Low noise, 1 dB at 0.5 GHz.
MAXIMUM RATINGS:
I
C
80 mA
V
CBO
20 V
V
CEO
10 V
V
EBO
1.5 V
P
DISS
580 mW @ T
A
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +200 °C
θ
JC
80 °C/W
PACKAGE STYLE .100 4L PILL
1 = BASE 3 = COLLECTOR 2& 4 = EMITTER
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