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參數(shù)資料
| 型號： | ASIPT9733 |
| 廠商： | Advanced Semiconductor, Inc. |
| 元件分類： | 振蕩器 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | 14引腳DIP封裝，5.0伏，高速CMOS/TTL電平，時鐘振蕩器 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 13K |
| 代理商： | ASIPT9733 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 25 mA
BV
CES
I
C
= 50 mA
BV
EBO
I
E
= 8.0 mA
I
CES
V
CE
= 25 V
h
FE
V
CE
= 10 V I
C
= 500 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
35
UNITS
V
V
V
mA
---
60
4.0
2.0
20
150
C
ob
P
G
η
C
VSWR
V
CB
= 28 V
f = 1.0 MHz
90
Pf
dB
%
---
V
CE
= 28 V P
OUT
=50 W f = 175 MHz
P
IN
= 10 W
6.0
60
6.0
60
∞
NPN SILICON RF POWER TRANSISTOR
PT9733
DESCRIPTION:
The
ASI PT9733
is an NPN power
transistor designed for 25 V Class-C
ground station transmitters, it utilizes
emitter ballasting and gold metalization
to provide optimum VSWR capability.
FEATURES:
Common Emitter
P
G
= 6.0 dB at 50 W/175 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
8.0 A
V
CES
60 V
V
EBO
4.0 V
P
DISS
85 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
2.1 °C/W
PACKAGE STYLE .380 4L STUD
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
H
.090 / 2.29
.100 / 2.54
DIM
.220 / 5.59
.230 / 5.84
.490 / 12.45
.450 / 11.43
I
J
.155 / 3.94
.175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E
F
D
C
B
.112x45°
G
H
J
I
A
#8-32 UNC-2A
C
B
E
E
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| ASIS15-28 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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| ASISD1006 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
| ASISD1425 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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