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參數(shù)資料
| 型號(hào)： | ASIBAT38 |
| 廠商： | Advanced Semiconductor, Inc. |
| 英文描述： | SILICON SCHOTTKY BARRIER DIODE |
| 中文描述： | 硅肖特基二極管 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | ASIBAT38 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
V
R
I
R
= 10
μ
A
V
F
I
F
= 1.0 mA
I
F
V
F
= 0.5 V
I
R
V
R
= 0.5 V
C
T
V
R
= 0 V f = 1.0 MHz
NF
I
F
= 0.5 mA f = 30 GHz
TEST CONDITIONS
MINIMUM TYPICAL
2.0
MAXIM
UNITS
V
0.29
V
2.0
mA
2.0
μA
.27
pF
6.0
dB
SILICON SCHOTTKY BARRIER DIODE
BAT38
PACKAGE STYLE
DESCRIPTION:
The
ASI BAT38
is a silicon Schottky
barrier mixer diode, Designed for use
in Ka frequency band Applications.
FEATURES INCLUDE:
Low R
S
Low NF 8.5 Db Typ.
Frequency Range 26 to 40 GHz
Available as Matched pairs by adding
the MP to the part number. Matching
criteria is
±
10% on rectified current
and within 150
i.f. impedance.
__
5.0
MAXIMUM RATINGS
V
R
250 mW @ T
C
= 25 °C
2.0 V
P
DISS
T
J
-55 °C to +100 °C
T
STG
-55 °C to +100 °C
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