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參數(shù)資料
| 型號： | ASIBLV33F |
| 廠商： | Advanced Semiconductor, Inc. |
| 英文描述： | GT 3C 3#16S SKT RECP WALL RM |
| 中文描述： | NPN硅射頻功率晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 23K |
| 代理商： | ASIBLV33F |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 50 mA
BV
CER
I
C
= 50 mA
BV
EBO
I
E
= 10 mA
I
CES
V
E
= 28 V
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
35
UNITS
V
R
BE
= 10
60
V
4.0
V
5
mA
10
100
---
C
ob
V
CB
= 28 V
f = 1.0 MHz
80
pF
G
PE
IMD
3
V
CE
= 25 V
P
REF
= 16 W Vision = -8 dB Snd. = -7 dB
Side Band = -16 dB
I
CQ
= 3.2 A f = 225 MHz
13.5
14.5
-55
dB
dBc
NPN SILICON RF POWER TRANSISTOR
BLV33F
DESCRIPTION:
The
ASI BLV33F
is Designed for
Operation in Band III TV Transposers
and Transmitter Amplifiers from
170 to 230 MHz.
FEATURES:
Gold Metalization
Internal Input Matching
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
10 A
V
CB
60 V
V
CE
35 V
P
DISS
140 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
1.5
O
C/W
T
J
T
STG
θ
JC
PACKAGE STYLE .500 6L FLG
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
ORDER CODE: ASI10493
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