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參數(shù)資料
| 型號： | AS7C4096-20TIN |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 5V/3.3V 512K X8 CMOS SRAM |
| 中文描述： | 512K X 8 STANDARD SRAM, 20 ns, PDSO44 |
| 封裝： | LEAD FREE, TSOP2-44 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 246K |
| 代理商： | AS7C4096-20TIN |
AS7C4096
AS7C34096
1/13/05; v.1.9
Alliance Semiconductor
P. 6 of 9
AC test conditions
- Output load: see Figure B or Figure C.
- Input pulse level: GND to 3.0V. See Figures A, B, and C.
- Input rise and fall times: 2 ns. See Figure A.
- Input and output timing reference levels: 1.5V.
Notes
1
2
3
4
5
6
7
8
9
10 CE or WE must be HIGH during address transitions. Either CE or WE asserting high terminates a write cycle.
11
All write cycle timings are referenced from the last valid address to the first transitioning address.
12 Not applicable.
13 C = 30pF, except at high Z and low Z parameters, where C = 5pF.
During V
CC
power-up, a pull-up resistor to V
CC
on CE is required to meet I
SB
specification.
This parameter is sampled, but not 100% tested.
For test conditions, see
AC Test Conditions
.
t
CLZ
and t
CHZ
are specified with C
L
= 5pF as in Figure C. Transition is measured ±500 mV from steady-state voltage.
This parameter is guaranteed, but not tested.
WE is HIGH for read cycle.
CE and OE are LOW for read cycle.
Address valid prior to or coincident with CE transition Low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
350
C
13
320
D
OUT
GND
+3.3V
Figure C: 3.3V Output load
168
Thevenin equivalent:
D
OUT
+1.728V
255
C
13
480
D
OUT
GND
+5V
Figure B: 5V Output load
10%
90%
10%
90%
GND
+3.0V
Figure A: Input pulse
2 ns
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C4096A-12JCN | 功能描述:靜態(tài)隨機存取存儲器 4M, 5V, 12ns, FAST 512K x 8 Asynch 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C4096A-12JCNTR | 功能描述:靜態(tài)隨機存取存儲器 4M, 3.3V, 12ns, FAST 512K x 8 Asynch 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C4096A-12JIN | 功能描述:靜態(tài)隨機存取存儲器 4M, 3.3V, 12ns, FAST 512K x 8 Asynch 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C4096A-12JINTR | 功能描述:靜態(tài)隨機存取存儲器 4M, 3.3V, 12ns, FAST 512K x 8 Asynch 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C4096A-12TCN | 功能描述:靜態(tài)隨機存取存儲器 4M, 5V, 12ns, FAST 512K x 8 Asynch 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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