參數(shù)資料
型號(hào): AS7C4096-20TIN
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類(lèi): DRAM
英文描述: 5V/3.3V 512K X8 CMOS SRAM
中文描述: 512K X 8 STANDARD SRAM, 20 ns, PDSO44
封裝: LEAD FREE, TSOP2-44
文件頁(yè)數(shù): 2/9頁(yè)
文件大?。?/td> 246K
代理商: AS7C4096-20TIN
AS7C4096
AS7C34096
1/13/05; v.1.9
Alliance Semiconductor
P. 2 of 9
Functional description
The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices
organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple
interfacing are desired.
Equal address access and cycle times (t
AA
, t
RC
, t
WC
) of 10/12/15/20 ns with output enable access times (t
OE
) of 5/6/7/8 ns are
ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank
memory systems.
When CE is high the device enters standby mode. The AS7C4096/AS7C34096 is guaranteed not to exceed 110/72 mW power
consumption in CMOS standby mode.
A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O1–I/O8 is
written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/
O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip
drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or
write enable is active, output drivers stay in high-impedance mode.
All chip inputs and outputs are TTL-compatible, and operation is from either a single 5V(AS7C4096) or 3.3V(AS7C34096)
supply. Both devices are available in the JEDEC standard 400-mil 36-pin SOJ and 44-pin TSOP 2 packages.
Absolute maximum ratings
Parameter
NOTE: Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and func-
tional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Key: X = Don’t care, L = Low, H = High
Device
AS7C4096
AS7C34096
Symbol
V
t1
V
t1
V
t2
P
D
T
stg
T
bias
I
OUT
Min
–1
–0.5
–0.5
–65
–55
Max
+7.0
+5.0
V
CC
+0.5
1.0
+150
+125
20
Unit
V
V
V
W
°
C
°
C
mA
Voltage on V
CC
relative to GND
Voltage on any pin relative to GND
Power dissipation
Storage temperature
Temperature with V
CC
applied
DC current unto output (low)
Truth table
CE
H
L
L
L
WE
X
H
H
L
OE
X
H
L
X
Data
High Z
High Z
D
OUT
D
IN
Mode
Standby (I
SB
, I
SB1
)
Output disable (I
CC
)
Read (I
CC
)
Write (I
CC
)
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AS7C4096A-12JCNTR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M, 3.3V, 12ns, FAST 512K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
AS7C4096A-12JIN 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M, 3.3V, 12ns, FAST 512K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
AS7C4096A-12JINTR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M, 3.3V, 12ns, FAST 512K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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