參數(shù)資料
型號(hào): AS7C33512PFS16A-133BI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: SRAM
英文描述: 512K X 16 STANDARD SRAM, 10 ns, PBGA119
封裝: 14 X 20 MM, BGA-119
文件頁(yè)數(shù): 12/14頁(yè)
文件大?。?/td> 370K
代理商: AS7C33512PFS16A-133BI
AS7C33512PFS16A
AS7C33512PFS18A
4/15/02; v.1.5
Alliance Semiconductor
7 of 14
TQFP thermal resistance
Description
Conditions
Symbol
Typical
Units
Thermal resistance
(junction to ambient)1
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51
1–layer
θ
JA
40
°C/W
4–layer
θ
JA
22
°C/W
Thermal resistance
(junction to top of case)1
θ
JC
8
°C/W
1 This parameter is sampled.
DC electrical characteristics
Parameter
Symbol
Test conditions
–166
–150
–133
–100
Unit
Min
Max Min Max Min
Max Min Max
Input leakage
current1
1 LBO pin has an internal pull-up and input leakage = ±10
A.
|ILI|VDD = Max, VIN = GND to VDD
–2–
2
–2–
2
A
Output leakage
current
|ILO|
OE
V
IH, VDD = Max,
VOUT = GND to VDD
–2–
2
–2–
2
A
Operating power
supply current
ICC
2
(Pipelined)
2 ICC given with no output loading. ICC increases with faster cycle times and greater output loading.
CE0 = VIL, CE1 = VIH, CE2 = VIL,
f = fMax, IOUT = 0 mA
475
450
425
325
mA
Operating power
supply current
ICC
(Flow-
Through)
CE0 = VIL, CE1 = VIH, CE2 = VIL,
f = fMax, IOUT = 0 mA
325
325
300
300
mA
Standby power
supply current
ISB
Deselected, f = fMax, ZZ VIL
–130
110
–100
90
mA
ISB1
Deselected, f = 0, ZZ
0.2V
all VIN 0.2V or VDD – 0.2V
–30–30
ISB2
Deselected, f = fMax, ZZ VDD – 0.2V
All VIN VIL or VIH
–30–30
Output voltage
VOL
IOL = 8 mA, VDDQ = 3.465V
0.4
0.4
0.4
0.4
V
VOH
IOH = –4 mA, VDDQ = 3.135V
2.4
2.4
2.4
2.4
DC electrical characteristics for 2.5V I/O operation
Parameter
Symbol
Test conditions
–166
–150
–133
–100
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Output leakage
current
|ILO|
OE
V
IH, VDD = Max,
VOUT = GND to VDD
–11–11–11–1
1
A
Output voltage
VOL
IOL = 2 mA, VDDQ = 2.65V
0.7
0.7
0.7
0.7
V
VOH
IOH = –2 mA, VDDQ = 2.35V
1.7
1.7
1.7
1.7
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