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參數(shù)資料
| 型號： | AS7C33512PFD18A |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | 3.3V 512K x 18 pipeline burst synchronous SRAM |
| 中文描述： | 3.3為512k × 18管道爆裂同步SRAM |
| 文件頁數(shù)： | 17/20頁 |
| 文件大?。?/td> | 515K |
| 代理商： | AS7C33512PFD18A |
AS7C33512PFD18A
12/1/04;
v.1.3
Alliance Semiconductor
17 of 20
AC test conditions
Output load: see Figure B, except for t
LZC
, t
LZOE
, t
HZOE
, t
HZC
, see Figure C.
Z
0
= 50
D
OUT
50
Figure B: Output load (A)
30 pF*
Figure A: Input waveform
10%
90%
GND
90%
10%
+3.0V
Input pulse level: GND to 3V. See Figure A.
Input rise and fall time (measured at 0.3V and 2.7V): 2 ns. See Figure A.
Input and output timing reference levels: 1.5V.
V
L
= 1.5V
for 3.3V I/O;
= V
DDQ
/2
for 2.5V I/O
Notes:
1) For test conditions, see “AC Test Conditions”, Figures A, B, C
2) This parameter measured with output load condition in Figure C.
3) This parameter is sampled, but not 100% tested.
4) t
HZOE
is less than t
LZOE
and t
HZC
is less than t
LZC
at any given temperature and voltage.
5) t
CH
measured HIGH above V
IH
and t
CL
measured as LOW below V
IL
6) This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must
meet the setup and hold times with stable logic levels for all rising edges of CLK when chip is enabled.
7) Write refers to
GWE
,
BWE
,
BW[a,b]
.
8) Chip select refers to
CE0
,
CE1
,
CE2
.
353
/ 1538
5 pF*
319
/ 1667
D
OUT
GND
Figure C: Output load (B)
*including scope
and jig capacitance
Thevenin equivalent:
+3.3V for 3.3V I/O;
/+2.5V for 2.5V I/O
相關(guān)PDF資料 |
PDF描述 |
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| AS7C33512PFD18A-133TQC | 3.3V 512K x 18 pipeline burst synchronous SRAM |
| AS7C33512PFD18A-133TQCN | 3.3V 512K x 18 pipeline burst synchronous SRAM |
| AS7C33512PFD18A-133TQI | 3.3V 512K x 18 pipeline burst synchronous SRAM |
| AS7C33512PFD18A-133TQIN | 3.3V 512K x 18 pipeline burst synchronous SRAM |
| AS7C33512PFD18A-166TQC | 3.3V 512K x 18 pipeline burst synchronous SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C33512PFD18A-133TQC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 pipeline burst synchronous SRAM |
| AS7C33512PFD18A-133TQCN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 pipeline burst synchronous SRAM |
| AS7C33512PFD18A-133TQI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 pipeline burst synchronous SRAM |
| AS7C33512PFD18A-133TQIN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 pipeline burst synchronous SRAM |
| AS7C33512PFD18A-166TQC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 pipeline burst synchronous SRAM |
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