參數(shù)資料
型號(hào)： AS7C33512FT36A-75TQIN
廠商： ALLIANCE SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 3.3V 512K x 32/36 Flow-through synchronous SRAM
中文描述： 512K X 36 STANDARD SRAM, 7.5 ns, PQFP100
封裝： 14 X 20 MM, LEAD FREE, TQFP-100
文件頁(yè)數(shù)： 9/19頁(yè)
文件大?。?/td> 523K
代理商： AS7C33512FT36A-75TQIN
12/23/04, v 1.4
Alliance Semiconductor
9 of 19
AS7C33512FT32A
AS7C33512FT36A
DC electrical characteristics for 3.3V I/O operation
DC electrical characteristics for 2.5V I/O operation
LBO and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10
μ
A.
*
V
IH
max < VDD +1.5V for pulse width less than 0.2 X t
CYC
**
V
IL
min = -1.5 for pulse width less than 0.2 X t
CYC
I
DD
operating conditions and maximum limits
Parameter
Sym
Conditions
Min
Max
Unit
Input leakage current
|I
LI
|
V
DD
= Max, 0V < V
IN
< V
DD
OE
≥
V
IH
, V
DD
= Max, 0V < V
OUT
< V
DDQ
-2
2
μA
Output leakage current
|I
LO
|
-2
2
μA
Input high (logic 1) voltage
V
IH
Address and control pins
2*
V
DD
+0.3
V
I/O pins
2*
V
DDQ
+0.3
Input low (logic 0) voltage
V
IL
Address and control pins
-0.3**
0.8
V
I/O pins
-0.5**
0.8
Output high voltage
V
OH
I
OH
= –4 mA, V
DDQ
= 3.135V
2.4
–
V
Output low voltage
V
OL
I
OL
= 8 mA, V
DDQ
= 3.465V
–
0.4
V
Parameter
Sym
Conditions
Min
Max
Unit
Input leakage current
|I
LI
|
V
DD
= Max, 0V < V
IN
< V
DD
OE
≥
V
IH
, V
DD
= Max, 0V < V
OUT
< V
DDQ
-2
2
μA
Output leakage current
|I
LO
|
-2
2
μA
Input high (logic 1) voltage
V
IH
Address and control pins
1.7*
V
DD
+0.3
V
I/O pins
1.7*
V
DDQ
+0.3
V
Input low (logic 0) voltage
V
IL
Address and control pins
-0.3**
0.7
V
I/O pins
-0.3**
0.7
V
Output high voltage
V
OH
I
OH
= –4 mA, V
DDQ
= 2.375V
1.7
–
V
Output low voltage
V
OL
I
OL
= 8 mA, V
DDQ
= 2.625V
–
0.7
V
Parameter
Sym
Conditions
-75
-85
-10
Unit
Operating power supply current
1
1 I
CC
given with no output loading. I
CC
increases with faster cycle times and greater output loading.
I
CC
CE0 < V
IL
, CE1 > V
IH
, CE2 < V
IL
, f = f
Max
,
I
OUT
= 0 mA, ZZ
<
V
IL
All V
IN
≤
0.2V or >
V
DD
– 0.2V,
Deselected,
f = f
Max
, ZZ
<
V
IL
Deselected, f = 0, ZZ
<
0.2V,
all V
IN
≤
0.2V or
≥
V
DD
– 0.2V
Deselected, f = f
Max
, ZZ
≥
V
DD
– 0.2V,
all V
IN
≤
V
IL
or
≥
V
IH
275
250
230
mA
Standby power supply current
I
SB
90
80
80
mA
I
SB1
60
60
60
I
SB2
50
50
50
相關(guān)PDF資料
PDF描述
AS7C33512FT36A-85TQC 3.3V 512K x 32/36 Flow-through synchronous SRAM
AS7C33512FT36A-85TQCN 3.3V 512K x 32/36 Flow-through synchronous SRAM
AS7C33512FT36A-85TQI 3.3V 512K x 32/36 Flow-through synchronous SRAM
AS7C33512FT36A-85TQIN 3.3V 512K x 32/36 Flow-through synchronous SRAM
AS7C33512FT36A-10TQC DIODE ZENER SINGLE 1000mW 27Vz 9.5mA-Izt 0.05 5uA-Ir 20.6Vr DO41-GLASS 5K/AMMO
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AS7C33512FT36A-85TQC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Flow-through synchronous SRAM
AS7C33512FT36A-85TQCN 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Flow-through synchronous SRAM
AS7C33512FT36A-85TQI 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Flow-through synchronous SRAM
AS7C33512FT36A-85TQIN 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Flow-through synchronous SRAM
AS7C33512NTD18A 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD
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