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| 型號(hào)： | AS7C33512FT36A-75TQIN |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 512K x 32/36 Flow-through synchronous SRAM |
| 中文描述： | 512K X 36 STANDARD SRAM, 7.5 ns, PQFP100 |
| 封裝： | 14 X 20 MM, LEAD FREE, TQFP-100 |
| 文件頁(yè)數(shù)： | 7/19頁(yè) |
| 文件大?。?/td> | 523K |
| 代理商： | AS7C33512FT36A-75TQIN |
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12/23/04, v 1.4
Alliance Semiconductor
7 of 19
AS7C33512FT32A
AS7C33512FT36A
Synchronous truth table
[4]
CE0
1
H
L
L
L
L
L
L
L
L
X
X
X
X
H
H
H
H
L
X
H
X
H
1 X = don’t care, L = low, H = high
2 For WRITE, L means any one or more byte write enable signals (BWa, BWb, BWc or BWd) and BWE are LOW or GWE is LOW. WRITE = HIGH for all
BWx, BWE, GWE HIGH. See "Write enable truth table (per byte)," on page 6 for more information.
3
For write operation following a READ,
OE
must be high before the input data set up time and held high throughout the input hold time
4 ZZ pin is always Low.
CE1
X
L
L
X
X
H
H
H
H
X
X
X
X
X
X
X
X
H
X
X
X
X
CE2
X
X
X
H
H
L
L
L
L
X
X
X
X
X
X
X
X
L
X
X
X
X
ADSP
X
L
H
L
H
L
L
H
H
H
H
H
H
X
X
X
X
H
H
X
H
X
ADSC
L
X
L
X
L
X
X
L
L
H
H
H
H
H
H
H
H
L
H
H
H
H
ADV
X
X
X
X
X
X
X
X
X
L
L
H
H
L
L
H
H
X
L
L
H
H
WRITE
[2]
X
X
X
X
X
X
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
OE
X
X
X
X
X
L
H
L
H
L
H
L
H
L
H
L
H
X
X
X
X
X
Address accessed
NA
NA
NA
NA
NA
External
External
External
External
Next
Next
Current
Current
Next
Next
Current
Current
External
Next
Next
Current
Current
CLK
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
Operation
Deselect
Deselect
Deselect
Deselect
Deselect
Begin read
Begin read
Begin read
Begin read
Continue read
Continue read
Suspend read
Suspend read
Continue read
Continue read
Suspend read
Suspend read
Begin write
Continue write
Continue write
Suspend write
Suspend write
DQ
Hi
Z
Hi
Z
Hi
Z
Hi
Z
Hi
Z
Q
Hi
Z
Q
Hi
Z
Q
Hi
Z
Q
Hi
Z
Q
Hi
Z
Q
Hi
Z
D
3
D
D
D
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS7C33512FT36A-85TQC | 3.3V 512K x 32/36 Flow-through synchronous SRAM |
| AS7C33512FT36A-85TQCN | 3.3V 512K x 32/36 Flow-through synchronous SRAM |
| AS7C33512FT36A-85TQI | 3.3V 512K x 32/36 Flow-through synchronous SRAM |
| AS7C33512FT36A-85TQIN | 3.3V 512K x 32/36 Flow-through synchronous SRAM |
| AS7C33512FT36A-10TQC | DIODE ZENER SINGLE 1000mW 27Vz 9.5mA-Izt 0.05 5uA-Ir 20.6Vr DO41-GLASS 5K/AMMO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C33512FT36A-85TQC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Flow-through synchronous SRAM |
| AS7C33512FT36A-85TQCN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Flow-through synchronous SRAM |
| AS7C33512FT36A-85TQI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Flow-through synchronous SRAM |
| AS7C33512FT36A-85TQIN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Flow-through synchronous SRAM |
| AS7C33512NTD18A | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD |
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