參數(shù)資料
型號(hào): AS7C332MNTD18A-166TQIN
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類(lèi): DRAM
英文描述: 3.3V 2M x 18 Pipelined SRAM with NTD
中文描述: 2M X 18 ZBT SRAM, 3.5 ns, PQFP100
封裝: 14 X 20 MM, LEAD FREE, TQFP-100
文件頁(yè)數(shù): 7/18頁(yè)
文件大小: 439K
代理商: AS7C332MNTD18A-166TQIN
12/23/04, V 1.6
Alliance Semiconductor
P. 7 of 18
AS7C332MNTD18A
State diagram for NTD SRAM
Absolute maximum ratings
Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
Recommended operating conditions at 2.5V I/O
Parameter
Symbol
V
DD
, V
DDQ
V
IN
V
IN
P
d
I
OUT
T
stg
T
bias
Min
–0.5
–0.5
–0.5
–65
–65
Max
+4.6
Unit
V
V
V
W
mA
o
C
o
C
Power supply voltage relative to GND
Input voltage relative to GND (input pins)
Input voltage relative to GND (I/O pins)
Power dissipation
Short circuit output current
Storage temperature
Temperature under bias
V
DD
+ 0.5
V
DDQ
+ 0.5
1.8
20
+150
+135
Parameter
Symbol
V
DD
V
DDQ
Vss
Min
3.135
3.135
0
Nominal
3.3
3.3
0
Max
3.465
3.465
0
Unit
V
V
V
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Parameter
Symbol
V
DD
V
DDQ
Vss
Min
3.135
2.375
0
Nominal
3.3
2.5
0
Max
3.465
2.625
0
Unit
V
V
V
Supply voltage for inputs
Supply voltage for I/O
Ground supply
D
Dsel
Read
Read
Burst
Burst
Write
Read
Write
Burst
Read
R
W
Dsel
Read
Burst
Write
D
Dse
Wrte
Wie
Burst
Dsel
Burst
Burst
Write
Read
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