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參數(shù)資料
| 型號： | AS7C33128PFD18B-166TQI |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 128K x 18 pipeline burst synchronous SRAM |
| 中文描述： | 128K X 18 STANDARD SRAM, 3.5 ns, PQFP100 |
| 封裝： | 14 X 20 MM, TQFP-100 |
| 文件頁數(shù)： | 9/19頁 |
| 文件大?。?/td> | 538K |
| 代理商： | AS7C33128PFD18B-166TQI |
AS7C33128PFD18B
1/31/05; v.1.2
Alliance Semiconductor
P. 9 of 19
DC electrical characteristics for 3.3V I/O operation
DC electrical characteristics for 2.5V I/O operation
LBO and ZZ pins and have an internal pull-up or pull-down, and input leakage = ±10
μ
A.
*
V
IH
max < VDD +1.5V for pulse width less than 0.2 X t
CYC
**
V
IL
min = -1.5 for pulse width less than 0.2 X t
CYC
I
DD
operating conditions and maximum limits
Parameter
Sym
Conditions
Min
Max
Unit
Input leakage current
|I
LI
|
V
DD
= Max, 0V < V
IN
< V
DD
OE
≥
V
IH
, V
DD
= Max, 0V < V
OUT
< V
DDQ
-2
2
μA
Output leakage current
|I
LO
|
-2
2
μA
Input high (logic 1) voltage
V
IH
Address and control pins
2*
V
DD
+0.3
V
I/O pins
2*
V
DDQ
+0.3
Input low (logic 0) voltage
V
IL
Address and control pins
-0.3**
0.8
V
I/O pins
-0.5**
0.8
Output high voltage
V
OH
I
OH
= –4 mA, V
DDQ
= 3.135V
2.4
–
V
Output low voltage
V
OL
I
OL
= 8 mA, V
DDQ
= 3.465V
–
0.4
V
Parameter
Sym
Conditions
Min
Max
Unit
Input leakage current
|I
LI
|
V
DD
= Max, 0V < V
IN
< V
DD
OE
≥
V
IH
, V
DD
= Max, 0V < V
OUT
< V
DDQ
-2
2
μA
Output leakage current
|I
LO
|
-2
2
μA
Input high (logic 1) voltage
V
IH
Address and control pins
1.7*
V
DD
+0.3
V
I/O pins
1.7*
V
DDQ
+0.3
V
Input low (logic 0) voltage
V
IL
Address and control pins
-0.3**
0.7
V
I/O pins
-0.3**
0.7
V
Output high voltage
V
OH
I
OH
= –4 mA, V
DDQ
= 2.375V
1.7
–
V
Output low voltage
V
OL
I
OL
= 8 mA, V
DDQ
= 2.625V
–
0.7
V
Parameter
Sym
Conditions
-200
-166
-133
Unit
Operating power supply current
1
1 I
CC
given with no output loading. I
CC
increases with faster cycle times and greater output loading.
I
CC
CE0 < V
IL
, CE1 > V
IH
, CE2 < V
IL
, f = f
Max
,
I
OUT
= 0 mA, ZZ
<
V
IL
All V
IN
≤
0.2V or >
V
DD
– 0.2V,
Deselected,
f = f
Max
, ZZ
<
V
IL
Deselected, f = 0, ZZ
<
0.2V,
all V
IN
≤
0.2V or
≥
V
DD
– 0.2V
Deselected, f = f
Max
, ZZ
≥
V
DD
– 0.2V,
all V
IN
≤
V
IL
or
≥
V
IH
375
350
325
mA
Standby power supply current
I
SB
130
100
90
mA
I
SB1
30
30
30
I
SB2
30
30
30
相關PDF資料 |
PDF描述 |
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| AS7C33128PFD18B-166TQIN | 3.3V 128K x 18 pipeline burst synchronous SRAM |
| AS7C33128PFD18B-200TQC | 3.3V 128K x 18 pipeline burst synchronous SRAM |
| AS7C33128PFD18B-200TQCN | 3.3V 128K x 18 pipeline burst synchronous SRAM |
| AS7C33128PFD18B-200TQI | 3.3V 128K x 18 pipeline burst synchronous SRAM |
| AS7C33128PFD18B-200TQIN | 3.3V 128K x 18 pipeline burst synchronous SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C33128PFD18B-166TQIN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 18 pipeline burst synchronous SRAM |
| AS7C33128PFD18B-200TQC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 18 pipeline burst synchronous SRAM |
| AS7C33128PFD18B-200TQCN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 18 pipeline burst synchronous SRAM |
| AS7C33128PFD18B-200TQI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 18 pipeline burst synchronous SRAM |
| AS7C33128PFD18B-200TQIN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 18 pipeline burst synchronous SRAM |
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