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參數(shù)資料
| 型號(hào)： | AS7C31026C |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | 3.3 V 64K X 16 CMOS SRAM |
| 中文描述： | 3.3伏64K的× 16 CMOS SRAM的 |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大小： | 180K |
| 代理商： | AS7C31026C |
AS7C31026C
9/20/06, v 1.0
Alliance Memory
P. 6 of 10
Write waveform 2 (CE controlled)
10,11
AC test conditions
– Output load: see Figure B.
– Input pulse level: GND to 3.0 V. See Figure A.
– Input rise and fall times: 3 ns. See Figure A.
– Input and output timing reference levels: 1.5
Notes
1
2
3
4
5
6
7
8
9
10 N/A
11
12 Not applicable.
13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF.
During V
CC
power-up, a pull-up resistor to V
CC
on CE is required to meet I
SB
specification.
This parameter is sampled, but not 100% tested.
For test conditions, see
AC Test Conditions
, Figures A and B.
These parameters are specified with C
L
= 5 pF, as in Figures B. Transition is measured ± 200 mV from steady-state voltage.
This parameter is guaranteed, but not tested.
WE is high for read cycle.
CE and OE are low for read cycle.
Address is valid prior to or coincident with CE transition low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
All write cycle timings are referenced from the last valid address to the first transitioning address.
Address
CE
LB, UB
WE
Data
IN
t
WC
t
CW
t
BW
t
WP
t
DW
t
DH
t
OW
t
WZ
t
WR
Data
OUT
Data undefined
high Z
high Z
t
AS
t
AW
Data valid
t
CLZ
t
AH
255
Ω
C
13
320
Ω
GND
+3.3 V
Figure B: 3.3 V Output load
168
Ω
Thevenin Equivalent:
D
OUT
+1.728 V
10%
90%
10%
90%
GND
+3.0 V
Figure A: Input pulse
3 ns
D
OUT
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C31026C-10BIN | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M, 3.3V, 10ns, FAST 64K x 16 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C31026C-10BINTR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M, 3.3V, 10ns, FAST 64K x 16 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C31026C-10TIN | 制造商:Alliance Memory Inc 功能描述:AS7C31026C Series 1-Mbit (64 K x 16) 3.3 V 10 ns CMOS Static RAM - TSOP 11-44 |
| AS7C31026C-12BIN | 功能描述:48BALL BGA 制造商:alliance memory, inc. 系列:- 零件狀態(tài):在售 存儲(chǔ)器類型:易失 存儲(chǔ)器格式:SRAM 技術(shù):SRAM - 異步 存儲(chǔ)容量:1Mb （64K x 16） 寫(xiě)周期時(shí)間 - 字，頁(yè):12ns 訪問(wèn)時(shí)間:12ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 標(biāo)準(zhǔn)包裝:360 |
| AS7C31026C-12BINTR | 功能描述:48BALL BGA 制造商:alliance memory, inc. 系列:- 零件狀態(tài):在售 存儲(chǔ)器類型:易失 存儲(chǔ)器格式:SRAM 技術(shù):SRAM - 異步 存儲(chǔ)容量:1Mb （64K x 16） 寫(xiě)周期時(shí)間 - 字，頁(yè):12ns 訪問(wèn)時(shí)間:12ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 標(biāo)準(zhǔn)包裝:1,500 |
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