- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381324 > AS7C256B (Alliance Semiconductor Corporation) 5V 32K X 8 CMOS SRAM (Common I/O) PDF資料下載
參數(shù)資料
| 型號： | AS7C256B |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | 5V 32K X 8 CMOS SRAM (Common I/O) |
| 中文描述： | 5V的32K的× 8 CMOS SRAM的（通用的I / O） |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 143K |
| 代理商： | AS7C256B |
AS7C256B
12/5/06;
V.1.0
Alliance Memory
P. 6 of 8
AC test conditions
- Output load: see Figure B.
- Input pulse level: GND to
V
CC
. See Figure A.
- Input rise and fall times: 3 ns. See Figure A.
- Input and output timing reference levels: 1.5V.
Notes
1
2
3
4
5
6
7
8
9
10
CE
or
WE
must be High during address transitions. Either CE or WE asserting high terminates a write cycle.
11
All write cycle timings are referenced from the last valid address to the first transitioning address.
12 CE1 and CE2 have identical timing.
13 C=30pF, except on High Z and Low Z parameters, where C=5pF.
During V
CC
power-up, a pull-up resistor to V
CC
on
CE
is required to meet I
SB
specification.
This parameter is sampled, but not 100% tested.
For test conditions, see
AC Test Conditions
, Figures A and B.
These parameters are specified with CL = 5pF, as in Figures B. Transition is measured
±
200mV from steady-state voltage.
This parameter is guaranteed, but not tested.
WE
is High for read cycle.
CE
and
OE
are Low for read cycle.
Address valid prior to or coincident with
CE
transition Low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
255
Ω
C
(13)
480
Ω
D
out
GND
V
CC
168
Ω
D
out
+1.72V (5V)
Figure B: Output load
Thevenin equivalent
10%
90%
10%
90%
GND
V
CC
Figure A: Input pulse
3 ns
相關PDF資料 |
PDF描述 |
|---|---|
| AS7C256L-12PC | High Performance 32Kx8 CMOS SRAM |
| AS7C256L-12SC | High Performance 32Kx8 CMOS SRAM |
| AS7C256L-12TC | High Performance 32Kx8 CMOS SRAM |
| AS7C256L-15JC | High Performance 32Kx8 CMOS SRAM |
| AS7C256L-15PC | High Performance 32Kx8 CMOS SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| as7c256b-12jin | 制造商:Alliance Memory Inc 功能描述:32K X 8 - Bulk |
| AS7C256B-12JINTR | 制造商:Alliance Memory Inc 功能描述:32K X 8 - Tape and Reel |
| AS7C256B-12PIN | 功能描述:靜態(tài)隨機存取存儲器 256K, 5V, 12ns, FAST 32K x 8 Asynch 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C256B-12TIN | 功能描述:靜態(tài)隨機存取存儲器 256K, 5V, 12ns, FAST 32K x 8 Asynch 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C256B-12TINTR | 功能描述:靜態(tài)隨機存取存儲器 256K, 5V, 12ns, FAST 32K x 8 Asynch 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。