參數(shù)資料
型號: AS7C256B
廠商: Alliance Semiconductor Corporation
英文描述: 5V 32K X 8 CMOS SRAM (Common I/O)
中文描述: 5V的32K的× 8 CMOS SRAM的(通用的I / O)
文件頁數(shù): 2/8頁
文件大?。?/td> 143K
代理商: AS7C256B
AS7C256B
12/5/06;
V.1.0
Alliance Memory
P. 2 of 8
Functional description
The AS7C256B is a 5V
high-performance C
MOS 262,144-bit Static Random-Access Memory (SRAM) device organized as
32,768 words × 8 bits. It is designed for memory applications requiring fast data access at low voltage, including Pentium
TM
,
PowerPC
TM
, and portable computing. Alliance’s advanced circuit design and process techniques permit 5.0V operation
without sacrificing performance or operating margins.
The device enters
standby mode
when
CE
is high. Equal address access and cycle times (t
AA
, t
RC
, t
WC
) of 12 ns with output
enable access times (t
OE
) of 6 ns are ideal for high-performance applications. The chip enable (
CE
) input permits easy memory
expansion with multiple-bank memory organizations.
A write cycle is accomplished by asserting chip enable (
CE
) and write enable (
WE
) LOW. Data on the input pins I/O0-I/O7 is
written on the rising edge of
WE
(write cycle 1) or
CE
(write cycle 2). To avoid bus contention, external devices should drive
I/O pins only after outputs have been disabled with output enable (
OE
) or write enable (
WE
).
A read cycle is accomplished by asserting chip enable (
CE
) and output enable (
OE
) LOW, with write enable (
WE
) high. The
chip drives I/O pins with the data word referenced by the input address. When chip enable or output enable is high, or write
enable is low, output drivers stay in high-impedance mode.
All chip inputs and outputs are TTL-compatible. Operation is from a single 5.0±0.5V supply. The AS7C256B is packaged in
high volume industry standard packages.
Absolute maximum ratings
Parameter
Symbol
Voltage on V
CC
relative to GND
V
t1
Voltage on any pin relative to GND
V
t2
Power dissipation
P
D
Storage temperature (plastic)
T
stg
Ambient temperature with V
CC
applied
T
bias
DC current into outputs (low)
I
OUT
Note:
Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Truth table
Notes:
H = V
IH
,
L = V
IL
, x = Don’t care.
V
LC
= 0.2V, V
HC
= V
CC
- 0.2V.
Other inputs
V
HC
or V
LC
.
Min
–0.5
–0.5
–55
–55
Max
+7.0
V
CC
+ 0.5
1.25
+125
+125
50
Unit
V
V
W
o
C
o
C
mA
CE
H
L
L
L
WE
X
H
H
L
OE
X
H
L
X
Data
High Z
High Z
D
OUT
D
IN
Mode
Standby (I
SB
, I
SB1
)
Output disable (I
CC
)
Read (I
CC
)
Write (I
CC
)
相關(guān)PDF資料
PDF描述
AS7C256L-12PC High Performance 32Kx8 CMOS SRAM
AS7C256L-12SC High Performance 32Kx8 CMOS SRAM
AS7C256L-12TC High Performance 32Kx8 CMOS SRAM
AS7C256L-15JC High Performance 32Kx8 CMOS SRAM
AS7C256L-15PC High Performance 32Kx8 CMOS SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
as7c256b-12jin 制造商:Alliance Memory Inc 功能描述:32K X 8 - Bulk
AS7C256B-12JINTR 制造商:Alliance Memory Inc 功能描述:32K X 8 - Tape and Reel
AS7C256B-12PIN 功能描述:靜態(tài)隨機(jī)存取存儲器 256K, 5V, 12ns, FAST 32K x 8 Asynch 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
AS7C256B-12TIN 功能描述:靜態(tài)隨機(jī)存取存儲器 256K, 5V, 12ns, FAST 32K x 8 Asynch 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
AS7C256B-12TINTR 功能描述:靜態(tài)隨機(jī)存取存儲器 256K, 5V, 12ns, FAST 32K x 8 Asynch 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray