參數(shù)資料
型號: AS7C256A-10TCN
廠商: ALLIANCE MEMORY INC
元件分類: SRAM
英文描述: IC,AS7C256A-10TCN,TSOP-28 ASY SRAM,10NS,32K X 8,5V
中文描述: 32K X 8 STANDARD SRAM, 10 ns, PDSO28
封裝: 8 X 13.4 MM, LEAD FREE, TSOP1-28
文件頁數(shù): 3/9頁
文件大小: 248K
代理商: AS7C256A-10TCN
AS7C256A
9/24/04; v.1.2
Alliance Semiconductor
P. 3 of 9
Recommended operating conditions
* V
IL min = –1.0V for pulse width less than 5ns.
** V
IH max = VCC + 2.0V for pulse width less than 5ns.
DC operating characteristics (over the operating range)1
Capacitance (f = 1MHz, Ta = room temperature, VCC = NOMINAL)4
Parameter
Symbol
Min
Typical
Max
Unit
Supply voltage
VCC
4.5
5.0
5.5
V
Input voltage
VIH**
2.2
VCC+0.5
V
VIL*
-0.5
0.8
V
Ambient operating temperature
commercial
TA
0–
70
oC
industrial
TA
–40
85
oC
Parameter
Sym
Test conditions
-10
-12
-15
-20
Unit Notes
Min Max Min Max Min Max Min Max
Input leakage
current
|ILI|
VCC = Max,
Vin = GND to VCC
–1–1–1–1
A
Output leakage
current
|ILO|
VCC = Max,
VOUT = GND to VCC
–1–1–1–1
A
Operating
power supply
current
ICC
VCC = Max, CE < VIL
f = fMax, IOUT = 0mA
–75
-
70
65–
60
mA
Standby power
supply current
ISB
VCC = Max, CE > VIH
f = fMax
–45–45–
40
40
mA
ISB1
VCC = Max, CE > VCC–0.2V
VIN < 0.2V or
VIN > VCC–0.2V, f = 0
2.0–2.0
–2.0
mA
Output voltage
VOL IOL = 8 mA, VCC = Min
0.4–0.4
–0.4
V
4
VOH IOH = –4 mA, VCC = Min
2.4–2.4–2.4
–2.4
V
4
Parameter
Symbol
Signals
Test conditions
Max
Unit
Input capacitance
CIN
A, CE, WE, OE
Vin = 0V
5
pF
I/O capacitance
CI/O
I/O
Vin = Vout = 0V
7
pF
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