參數(shù)資料
型號: AS7C256A-10JIN
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 5V 32K X 8 CMOS SRAM (Common I/O)
中文描述: 32K X 8 STANDARD SRAM, 10 ns, PDSO28
封裝: 0.300 INCH, LEAD FREE, PLASTIC, SOJ-28
文件頁數(shù): 3/9頁
文件大小: 248K
代理商: AS7C256A-10JIN
AS7C256A
9/24/04; v.1.2
Alliance Semiconductor
P. 3 of 9
Recommended operating conditions
Parameter
Supply voltage
* V
IL
min = –1.0V for pulse width less than 5ns.
** V
IH
max = V
CC
+ 2.0V for pulse width less than 5ns.
DC operating characteristics (over the operating range)
1
Capacitance (f = 1MHz, T
a
= room temperature, V
CC
= NOMINAL)
4
Parameter
Symbol
V
CC
V
IH**
V
IL*
T
A
T
A
Min
4.5
Typical
5.0
Max
5.5
Unit
V
Input voltage
2.2
V
CC
+0.5
0.8
70
V
-0.5
0
V
o
C
o
C
Ambient operating temperature
commercial
industrial
–40
85
Parameter
Input leakage
current
Sym
Test conditions
V
CC
= Max,
V
in
= GND to V
CC
|
I
LO
|
V
CC
= Max,
V
OUT
= GND to V
CC
-10
-12
-15
-20
Unit Notes
Min
Max
Min
Max
Min
Max
Min
Max
|
I
LI
|
1
1
1
1
μA
Output leakage
current
1
1
1
1
μA
Operating
power supply
current
I
CC
V
CC
= Max, CE
<
V
IL
f = f
Max
, I
OUT
= 0mA
75
-
70
65
60
mA
Standby power
supply current
I
SB
V
CC
= Max, CE
>
V
IH
f = f
Max
V
CC
= Max, CE
>
V
CC
–0.2V
V
IN
< 0.2V or
V
IN
> V
CC
–0.2V, f = 0
V
OL
I
OL
= 8 mA, V
CC
= Min
V
OH
I
OH
= –4 mA, V
CC
= Min
45
45
40
40
mA
I
SB1
2.0
2.0
2.0
2.0
mA
Output voltage
0.4
0.4
0.4
0.4
V
V
4
4
2.4
2.4
2.4
2.4
Symbol
Signals
Test conditions
Max
Unit
Input capacitance
I/O capacitance
C
IN
C
I/O
A,
CE
,
WE
,
OE
I/O
V
in
= 0V
V
in
= V
out
= 0V
5
7
pF
pF
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