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參數(shù)資料
| 型號： | AS7C252MPFS18A-200TQC |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 2.5V 2M x 18 pipelined burst synchronous SRAM |
| 中文描述： | 2M X 18 STANDARD SRAM, 3.1 ns, PQFP100 |
| 封裝： | 14 X 20 MM, TQFP-100 |
| 文件頁數(shù)： | 8/18頁 |
| 文件大?。?/td> | 507K |
| 代理商： | AS7C252MPFS18A-200TQC |
AS7C252MPFS18A
2/14/05,
v.1.3
Alliance Semiconductor
8 of 18
Absolute maximum ratings
Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
may affect reliability.
Recommended operating conditions
DC electrical characteristics
LBO and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10
μ
A.
*
V
IH
max < VDD +1.5V for pulse width less than 0.2 X t
CYC
**
V
IL
min = -1.5 for pulse width less than 0.2 X t
CYC
I
DD
operating conditions and maximum limits
Parameter
Symbol
V
DD
, V
DDQ
V
IN
V
IN
P
d
I
OUT
T
stg
T
bias
Min
–0.3
–0.3
–0.3
–
–
–65
–65
Max
+3.6
Unit
V
V
V
W
mA
o
C
o
C
Power supply voltage relative to GND
Input voltage relative to GND (input pins)
Input voltage relative to GND (I/O pins)
Power dissipation
Short circuit output current
Storage temperature
Temperature under bias
V
DD
+ 0.3
V
DDQ
+ 0.3
1.8
20
+150
+135
Parameter
Symbol
V
DD
V
DDQ
Vss
Min
2.375
2.375
0
Nominal
2.5
2.5
0
Max
2.625
2.625
0
Unit
V
V
V
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Parameter
Sym
|I
LI
|
|I
LO
|
Conditions
Min
-2
-2
1.7
*
1.7
*
-0.3
**
-0.3
**
1.7
–
Max
2
2
V
DD
+0.3
V
DDQ
+0.3
0.7
0.7
–
0.7
Unit
μA
μA
V
V
V
V
V
V
Input leakage current
Output leakage current
V
DD
= Max, OV < V
IN
< V
DD
OE
≥
V
IH
, V
DD
= Max, OV < V
OUT
< V
DDQ
Address and control pins
I/O pins
Address and control pins
I/O pins
I
OH
= –4 mA, V
DDQ
= 2.375V
I
OL
= 8 mA, V
DDQ
= 2.625V
Input high (logic 1) voltage
V
IH
Input low (logic 0) voltage
V
IL
Output high voltage
Output low voltage
V
OH
V
OL
Parameter
Sym
Conditions
-200
-166
-133
Unit
Operating power supply current
1
1 I
CC
given with no output loading. I
CC
increases with faster cycle times and greater output loading.
I
CC
CE0 < V
IL
, CE1 > V
IH
, CE2 < V
IL
, f = f
Max
,
I
OUT
= 0 mA, ZZ
<
V
IL
All V
IN
≤
0.2V or >
V
DD
– 0.2V,
Deselected,
f = f
Max
, ZZ
<
V
IL
Deselected, f = 0, ZZ
<
0.2V,
all V
IN
≤
0.2V or
≥
V
DD
– 0.2V
Deselected, f = f
Max
, ZZ
≥
V
DD
– 0.2V,
all V
IN
≤
V
IL
or
≥
V
IH
450
400
350
mA
Standby power supply current
I
SB
170
150
140
mA
I
SB1
90
90
90
I
SB2
80
80
80
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相關代理商/技術參數(shù) |
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|---|---|
| AS7C252MPFS18A-200TQCN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:2.5V 2M x 18 pipelined burst synchronous SRAM |
| AS7C252MPFS18A-200TQI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:2.5V 2M x 18 pipelined burst synchronous SRAM |
| AS7C252MPFS18A-200TQIN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:2.5V 2M x 18 pipelined burst synchronous SRAM |
| AS7C25512FT32A-10TQC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:2.5V 512K x 32/36 flowthrough burst synchronous SRAM |
| AS7C25512FT32A-10TQCN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:2.5V 512K x 32/36 flowthrough burst synchronous SRAM |
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