參數(shù)資料
型號: AS7C251MFT36A-85TQIN
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 2.5V 1M x 32/36 Flow-through synchronous SRAM
中文描述: 1M X 36 STANDARD SRAM, 8.5 ns, PQFP100
封裝: 14 X 20 MM, LEAD FREE, TQFP-100
文件頁數(shù): 8/19頁
文件大?。?/td> 520K
代理商: AS7C251MFT36A-85TQIN
AS7C251MFT32A
AS7C251MFT36A
1/17/05, v 1.2
Alliance Semiconductor
8 of 19
Absolute maximum ratings
Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
may affect reliability.
Recommended operating conditions
Parameter
Symbol
Min
Max
Unit
Power supply voltage relative to GND
V
DD
, V
DDQ
–0.3
+3.6
V
Input voltage relative to GND (input pins)
V
IN
–0.3
V
DD
+ 0.3
V
Input voltage relative to GND (I/O pins)
V
IN
–0.3
V
DDQ
+ 0.3
V
Power dissipation
P
d
1.8
W
Short circuit output current
I
OUT
20
mA
Storage temperature
T
stg
–65
+150
o
C
Temperature under bias
T
bias
–65
+135
o
C
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
V
DD
2.375
2.5
2.625
V
Supply voltage for I/O
V
DDQ
2.375
2.5
2.625
V
Ground supply
Vss
0
0
0
V
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