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AS7C251MFT18A
12/24/04, v. 1.2
Alliance Semiconductor
8 of 19
Absolute maximum ratings
Note: Stresses greater than those listed in this table may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions may affect reliability.
Recommended operating conditions
Parameter
Power supply voltage relative to GND
Input voltage relative to GND (input pins)
Input voltage relative to GND (I/O pins)
Power dissipation
DC output current
Storage temperature
Temperature under bias
Symbol
V
DD
, V
DDQ
V
IN
V
IN
P
D
I
OUT
T
stg
T
bias
Min
–0.3
–0.3
–0.3
–
–
–65
–65
Max
+3.6
Unit
V
V
V
W
mA
o
C
o
C
V
DD
+ 0.3
V
DDQ
+ 0.3
1.8
20 mA
+150
+135
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
V
DD
V
DDQ
Vss
2.375
2.5
2.625
V
Supply voltage for I/O
2.375
2.5
2.625
V
Ground supply
0
0
0
V
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AS7C251MFT18A-10TQCN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:2.5V 1M x 18 flowthrough burst synchronous SRAM |
| AS7C251MFT18A-10TQI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:2.5V 1M x 18 flowthrough burst synchronous SRAM |
| AS7C251MFT18A-10TQIN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:2.5V 1M x 18 flowthrough burst synchronous SRAM |
| AS7C251MFT18A-75TQC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:2.5V 1M x 18 flowthrough burst synchronous SRAM |
| AS7C251MFT18A-75TQCN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:2.5V 1M x 18 flowthrough burst synchronous SRAM |
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