- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄298830 > AS7C1026B-12TCN (ALLIANCE MEMORY INC) IC,AS7C1026B-12TCN,TSOP-32 I, SRAM,12NS,64K X 16,5V PDF資料下載
參數(shù)資料
| 型號： | AS7C1026B-12TCN |
| 廠商： | ALLIANCE MEMORY INC |
| 元件分類： | SRAM |
| 英文描述： | IC,AS7C1026B-12TCN,TSOP-32 I, SRAM,12NS,64K X 16,5V |
| 中文描述： | 64K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| 封裝： | 10.20 X 18.40 MM, LEAD FREE, TSOP2-44 |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 122K |
| 代理商： | AS7C1026B-12TCN |
AS7C1026B
3/26/04, v 1.3
Alliance Semiconductor
P. 7 of 10
AC test conditions
Notes
1
During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.
2
This parameter is sampled, but not 100% tested.
3
For test conditions, see AC Test Conditions, Figures A and B.
4
These parameters are specified with CL = 5 pF, as in Figures B. Transition is measured ± 500 mV from steady-state voltage.
5
This parameter is guaranteed, but not tested.
6WE is high for read cycle.
7CE and OE are low for read cycle.
8
Address is valid prior to or coincident with CE transition low.
9
All read cycle timings are referenced from the last valid address to the first transitioning address.
10 N/A.
11
All write cycle timings are referenced from the last valid address to the first transitioning address.
12 Not applicable.
13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF.
168
Thevenin Equivalent:
DOUT
+1.728 V
255
C13
480
GND
+5 V
Figure B: 5 V Output load
10%
90%
10%
90%
GND
+3.5V
Figure A: Input pulse
2 ns
DOUT
– Output load: see Figure B.
– Input pulse level: GND to 3.5 V. See Figure A.
– Input rise and fall times: 2 ns. See Figure A.
– Input and output timing reference levels: 1.5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS7C164-15JCN | IC,AS7C164-15JCN,SOJ-28 ASY SRAM,15NS,8K X 8,5V |
| AS7C164L-20JC | 8K X 8 STANDARD SRAM, 20 ns, PDSO28 |
| AS7C25512PFS32A-225BC | 512K X 32 STANDARD SRAM, 6.9 ns, PBGA165 |
| AS7C256A-10TCN | IC,AS7C256A-10TCN,TSOP-28 ASY SRAM,10NS,32K X 8,5V |
| AS7C31024-15PC | 128K X 8 STANDARD SRAM, 15 ns, PDIP32 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C1026B-12TCNTR | 功能描述:靜態(tài)隨機(jī)存取存儲器 1M, 5V, 12ns FAST 64K x 16 Asynch 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C1026B-12TI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5 V 64K X 16 CMOS SRAM |
| AS7C1026B-12TIN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5 V 64K X 16 CMOS SRAM |
| AS7C1026B-12TJCN | 功能描述:靜態(tài)隨機(jī)存取存儲器 Fast Asynch 5V 64Kx16 12ns 1Mb RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C1026B15JC | 制造商:Alliance Memory Inc 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。