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參數資料
| 型號： | AS7C1026B-10TIN |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 5 V 64K X 16 CMOS SRAM |
| 中文描述： | 64K X 16 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | 10.20 X 18.40 MM, LEAD FREE, TSOP2-44 |
| 文件頁數： | 7/10頁 |
| 文件大?。?/td> | 122K |
| 代理商： | AS7C1026B-10TIN |
AS7C1026B
3/26/04, v 1.3
Alliance Semiconductor
P. 7 of 10
AC test conditions
– Output load: see Figure B.
– Input pulse level: GND to 3.5 V. See Figure A.
– Input rise and fall times: 2 ns. See Figure A.
– Input and output timing reference levels: 1.5
Notes
1
2
3
4
5
6
7
8
9
10 N/A.
11
All write cycle timings are referenced from the last valid address to the first transitioning address.
12 Not applicable.
13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF.
During V
CC
power-up, a pull-up resistor to V
CC
on CE is required to meet I
SB
specification.
This parameter is sampled, but not 100% tested.
For test conditions, see
AC Test Conditions
, Figures A and B.
These parameters are specified with C
L
= 5 pF, as in Figures B. Transition is measured ± 500 mV from steady-state voltage.
This parameter is guaranteed, but not tested.
WE is high for read cycle.
CE and OE are low for read cycle.
Address is valid prior to or coincident with CE transition low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
168
Thevenin Equivalent:
D
OUT
+1.728 V
255
C
13
480
GND
+5 V
Figure B: 5 V Output load
10%
90%
10%
90%
GND
+3.5V
Figure A: Input pulse
2 ns
D
OUT
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| AS7C1026B-12JC | 5 V 64K X 16 CMOS SRAM |
| AS7C1026B-15JIN | 5 V 64K X 16 CMOS SRAM |
| AS7C1026B-20JIN | 5 V 64K X 16 CMOS SRAM |
| AS7C1026B | 5 V 64K X 16 CMOS SRAM |
| AS7C1026B-12TIN | 5 V 64K X 16 CMOS SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AS7C1026B-12JC | 制造商:Alliance Memory Inc 功能描述:AS7C1026B Series 1-Mbit (64 K x 16) 5 V 12 ns CMOS Static RAM - SOJ-44 制造商:Alliance Memory Inc 功能描述:16KX64, 5V, 12NS 44-SOJ 制造商:Alliance Semiconductor Corporation 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, SOJ |
| AS7C1026B-12JCN | 功能描述:靜態(tài)隨機存取存儲器 1M, 5V, 12ns FAST 64K x 16 Asynch 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C1026B-12JCNTR | 功能描述:靜態(tài)隨機存取存儲器 1M, 5V, 12ns FAST 64K x 16 Asynch 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C1026B-12JI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5 V 64K X 16 CMOS SRAM |
| AS7C1026B-12JIN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5 V 64K X 16 CMOS SRAM |
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