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參數(shù)資料
| 型號(hào)： | AS7C1026B-10TI |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 5 V 64K X 16 CMOS SRAM |
| 中文描述： | 64K X 16 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | 10.20 X 18.40 MM, TSOP2-44 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 122K |
| 代理商： | AS7C1026B-10TI |
AS7C1026B
3/26/04, v 1.3
Alliance Semiconductor
P. 2 of 10
Functional description
The AS7C1026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words ×
16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.
Equal address access and cycle times (t
AA
, t
RC
, t
WC
) of 10/12/15/20 ns with output enable access times (t
OE
) of 5, 6, 7, 8 ns are ideal for
high-performance applications.
When CE is high, the device enters standby mode. If inputs are still toggling, the device will consume I
SB
power. If the bus is static, then full
standby power is reached (I
SB1
). For example, the AS7C1026B is guaranteed not to exceed 55 mW under nominal full standby conditions.
A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O0 through I/O15 is written on
the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after
outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and chip enable (CE) with write enable (WE) high. The chip drives I/O pins
with the data word referenced by the input address. When either chip enable or output enable is inactive or write enable is active, output
drivers stay in high-impedance mode.
The device provides multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be written and
read. LB controls the lower bits, I/O0 through I/O7, and UB controls the higher bits, I/O8 through I/O15.
All chip inputs and outputs are TTL-compatible, and operation is from a single 5 V supply. The device is packaged in common industry
standard packages.
Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and func-
tional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
Key:
H = high, L = low, X = don’t care.
Absolute maximum ratings
Parameter
Voltage on V
CC
relative to GND
Voltage on any pin relative to GND
Power dissipation
Storage temperature (plastic)
Ambient temperature with VCC
applied
DC current into outputs (low)
Symbol
V
t1
V
t2
P
D
T
stg
Min
–0.50
–0.50
–
–65
Max
+7.0
Unit
V
V
W
°
C
V
CC
+0.50
1.0
+150
T
bias
–55
+125
°
C
I
OUT
–
20
mA
Truth table
CE
H
L
L
L
L
L
L
L
L
WE
X
H
H
H
L
L
L
H
X
OE
X
L
L
L
X
X
X
H
X
LB
X
L
H
L
L
L
H
X
H
UB
X
H
L
L
L
H
L
X
H
I/O0–I/O7
High Z
D
OUT
High Z
D
OUT
D
IN
D
IN
High Z
I/O8–I/O15
High Z
High Z
D
OUT
D
OUT
D
IN
High Z
D
IN
Mode
Standby (I
SB
), I
SBI
)
Read I/O0–I/O7 (I
CC
)
Read I/O8–I/O15 (I
CC)
Read I/O0–I/O15 (I
CC
)
Write I/O0–I/O15 (I
CC
)
Write I/O0–I/O7 (I
CC
)
Write I/O8–I/O15 (I
CC
)
High Z
High Z
Output disable (I
CC
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS7C1026B-10TIN | 5 V 64K X 16 CMOS SRAM |
| AS7C1026B-12JC | 5 V 64K X 16 CMOS SRAM |
| AS7C1026B-15JIN | 5 V 64K X 16 CMOS SRAM |
| AS7C1026B-20JIN | 5 V 64K X 16 CMOS SRAM |
| AS7C1026B | 5 V 64K X 16 CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C1026B-10TIN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5 V 64K X 16 CMOS SRAM |
| AS7C1026B-12JC | 制造商:Alliance Memory Inc 功能描述:AS7C1026B Series 1-Mbit (64 K x 16) 5 V 12 ns CMOS Static RAM - SOJ-44 制造商:Alliance Memory Inc 功能描述:16KX64, 5V, 12NS 44-SOJ 制造商:Alliance Semiconductor Corporation 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, SOJ |
| AS7C1026B-12JCN | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M, 5V, 12ns FAST 64K x 16 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C1026B-12JCNTR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M, 5V, 12ns FAST 64K x 16 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C1026B-12JI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5 V 64K X 16 CMOS SRAM |
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