參數(shù)資料
型號(hào)： AS7C1025B-12JIN
廠商： ALLIANCE SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 5V 128K X 8 CMOS SRAM (Center power and ground)
中文描述： 128K X 8 STANDARD SRAM, 12 ns, PDSO32
封裝： 0.400 INCH, SOJ-32
文件頁(yè)數(shù)： 6/9頁(yè)
文件大小： 103K
代理商： AS7C1025B-12JIN
AS7C1025B
3/26/04, v. 1.3
Alliance Semiconductor
P. 6 of 9
Write waveform 2 (CE controlled)
10,11
AC test conditions
– Output load: see Figure B.
– Input pulse level: GND to 3.5 V. See Figure A.
– Input rise and fall times: 2 ns. See Figure A.
– Input and output timing reference levels: 1.5 V.
Notes
1
2
3
4
5
6
7
8
9
10 N/A
11
12 N/A.
13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF.
During V
CC
power-up, a pull-up resistor to V
CC
on
CE
is required to meet I
SB
specification.
This parameter is sampled, but not 100% tested.
For test conditions, see
AC Test Conditions
, Figures A and B.
t
CLZ
and t
CHZ
are specified with CL = 5 pF, as in Figure B. Transition is measured
±
500 mV from steady-state voltage.
This parameter is guaranteed, but not 100% tested.
WE
is high for read cycle.
CE
and
OE
are low for read cycle.
Address is valid prior to or coincident with
CE
transition low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
All write cycle timings are referenced from the last valid address to the first transitioning address.
t
AW
Address
CE
WE
D
OUT
t
CW
t
WP
t
DW
Data valid
t
DH
t
AH
t
WR
t
WZ
t
WC
t
AS
D
IN
168
Thevenin equivalent:
D
OUT
+1.728 V
255
C
13
480
D
OUT
GND
+5 V
Figure B: 5 V Output load
10%
90%
10%
90%
GND
+3.5 V
Figure A: Input pulse
2 ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AS7C1025B-12TCN 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 Fast Asynch 5V Cen Pw 128Kx8 12ns 1Mb RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
AS7C1025B-12TJC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 128K X 8 CMOS SRAM (Center power and ground)
AS7C1025B-12TJCN 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M, 5V, 12ns FAST 128K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
AS7C1025B-12TJCNTR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M, 5V, 12ns FAST 128K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
AS7C1025B-12TJI 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 128K X 8 CMOS SRAM (Center power and ground)
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