參數(shù)資料
型號: AS7C1025B-12JIN
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 5V 128K X 8 CMOS SRAM (Center power and ground)
中文描述: 128K X 8 STANDARD SRAM, 12 ns, PDSO32
封裝: 0.400 INCH, SOJ-32
文件頁數(shù): 3/9頁
文件大?。?/td> 103K
代理商: AS7C1025B-12JIN
AS7C1025B
3/26/04, v. 1.3
Alliance Semiconductor
P. 3 of 9
V
IL
min = -1.0V for pulse width less than 5ns
V
IH
max = V
CC
+2.0V for pulse width less than 5ns.
Capacitance (
f = 1 MHz, T
a
= 25
o
C, V
CC
= NOMINAL
)
2
Parameter
Input capacitance
I/O capacitance
Recommended operating conditions
Parameter
Symbol
V
CC
V
IH
V
IL
T
A
T
A
Min
4.5
2.2
–0.5
0
–40
Nominal
5.0
Max
5.5
Unit
V
V
V
o
C
o
C
Supply voltage
Input voltage
V
CC
+ 0.5
0.8
70
85
Ambient operating temperature
commercial
industrial
DC operating characteristics (over the operating range)
1
Parameter
Symbol
|
I
LI
|
Test conditions
-10
-12
-15
-20
Unit
μ
A
Min Max Min
Max Min Max Min Max
Input leakage current
V
CC
= Max, V
IN
= GND to V
CC
V
CC
= Max, CE = V
IH
,
V
out
= GND to V
CC
V
CC
= Max
CE
V
IL
, f = f
Max,
I
OUT
= 0 mA
V
CC
= Max
CE
V
IH
, f = f
Max
V
CC
= Max
CE
V
CC
–0.2 V,
V
IN
0.2 V or V
IN
V
CC
–0.2 V,
f = 0
1
1
1
1
Output leakage
current
|
I
LO
|
1
1
1
1
μ
A
Operating power
supply current
I
CC
110
100
90
80
mA
Standby power supply
current
1
I
SB
50
45
45
40
mA
I
SB1
10
10
10
10
mA
Output voltage
V
OL
V
OH
I
OL
= 8 mA, V
CC
= Min
I
OH
= –4 mA, V
CC
= Min
0.4
0.4
0.4
0.4
V
2.4
2.4
2.4
2.4
V
Symbol
C
IN
C
I/O
Signals
Test conditions
V
IN
= 0 V
V
IN
= V
OUT
= 0 V
Max
5
7
Unit
pF
pF
A,
CE
,
WE
,
OE
I/O
相關(guān)PDF資料
PDF描述
AS7C1025B-12TJC 5V 128K X 8 CMOS SRAM (Center power and ground)
AS7C1025B-12TJCN 5V 128K X 8 CMOS SRAM (Center power and ground)
AS7C1025B-15TJCN 5V 128K X 8 CMOS SRAM (Center power and ground)
AS7C1026-12BI 5V / 3.3V 64KX16 CMOS SRAM
AS7C1026-12TI 5V / 3.3V 64KX16 CMOS SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AS7C1025B-12TCN 功能描述:靜態(tài)隨機(jī)存取存儲器 Fast Asynch 5V Cen Pw 128Kx8 12ns 1Mb RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
AS7C1025B-12TJC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 128K X 8 CMOS SRAM (Center power and ground)
AS7C1025B-12TJCN 功能描述:靜態(tài)隨機(jī)存取存儲器 1M, 5V, 12ns FAST 128K x 8 Asynch 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
AS7C1025B-12TJCNTR 功能描述:靜態(tài)隨機(jī)存取存儲器 1M, 5V, 12ns FAST 128K x 8 Asynch 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
AS7C1025B-12TJI 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 128K X 8 CMOS SRAM (Center power and ground)