參數(shù)資料
型號: AS4LC4M4E0-60TC
英文描述: x4 EDO Page Mode DRAM
中文描述: x4 EDO公司頁面模式的DRAM
文件頁數(shù): 4/15頁
文件大?。?/td> 265K
代理商: AS4LC4M4E0-60TC
AS4LC4M4E0
AS4LC4M4E1
4/11/01; V1.1
Alliance Semiconductor
P. 4 of 15
DC electrical characteristics
Power dissipation
P
D
I
out
0.5
W
Short circuit output current
50
mA
Parameter
Symbol Test conditions
0V
V
in
+V
CC
(max)
Pins not under test = 0V
D
OUT
disabled, 0V
V
out
+V
CC
(max)
-50
-60
Unit
Notes
Min
Max
Min
Max
Input leakage current
I
IL
-5
+5
-5
+5
μA
Output leakage current
I
OL
-5
+5
-5
+5
μA
Operating power
supply current
I
CC1
CAS
, Address cycling; t
RC
= min
120
110
mA
1,2
TTL standby power
supply current
I
CC2
RAS
=
CAS
V
IH
2.0
2.0
mA
Average power supply
current,
RAS
refresh
mode or CBR
I
CC3
RAS
cycling,
CAS
V
IH
,
t
RC
= min of
RAS
low after
CAS
low.
120
110
mA
1
EDO page mode average
power supply current
I
CC4
RAS
= V
IL
,
CAS,
address cycling: t
HPC
= min
90
80
mA
1, 2
CMOS standby power
supply current
I
CC5
RAS
=
CAS
= V
CC
- 0.2V
1.0
1.0
mA
Output voltage
V
OH
V
OL
I
OUT
= -2.0 mA
I
OUT
= 2.0 mA
2.4
2.4
V
0.4
0.4
V
CAS
before
RAS
refresh
current
I
CC6
RAS
,
CAS
cycling, t
RC
= min
120
110
mA
Self refresh current
I
CC7
RAS
=
CAS
0.2V
WE = OE
V
CC
- 0.2V,
all other inputs at 0.2V or
V
CC
- 0.2V
0.6
0.6
mA
Parameter
Symbol
Min
Max
Unit
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