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參數資料
| 型號： | AS4LC4M16S0-8TC |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-54 |
| 文件頁數： | 5/24頁 |
| 文件大?。?/td> | 566K |
| 代理商： | AS4LC4M16S0-8TC |
AS4LC8M8S0
AS4LC4M16S0
7/5/00
ALLIANCE SEMICONDUCTOR
5
Mode register fields
RFU = 0 during MRS cycle.
Register programmed with MRS
A9
A8
WBL
TM
Address
Function
A11~A10
RFU
A7
A6
A5
A4
A3
BT
A2
A1
A0
CAS latency
Burst length
Write burst length
A9
Burst type
Length
A3
0
1
Type
0
Programmed
burst length
Sequential
Interleaved
1
Single burst
Test mode
A8
0
0
1
A7
0
1
0
1
Type
Mode register set
Reserved
Reserved
Reserved
1
CAS latency
A4
0
1
0
1
X
Burst length
A0
A6
0
0
0
0
1
A5
0
0
1
1
X
Latency
Reserved
Reserved
2
3
Reserved
A2
0
0
0
0
1
1
1
1
A1
0
0
1
1
0
0
1
1
BT = 0
1
2
4
8
Reserved
Reserved
Reserved
Full page
BT = 1
1
2
4
8
Reserved
Reserved
Reserved
Reserved
0
1
0
1
0
1
0
1
相關PDF資料 |
PDF描述 |
|---|---|
| AS4LC8M8S0 | 3.3V 8M × 8 CMOS Synchronous DRAM(3.3V 8M × 8 CMOS同步動態(tài)RAM) |
| AS4LC4M16S0-10FTC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M16S0-10TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC8M8S0-10FTC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC8M8S0-10TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
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