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參數(shù)資料
| 型號(hào)： | AS4LC1M16S1 |
| 英文描述： | 3.3V 2Mx8 / 1Mx16 CMOS synchronous DRAM |
| 中文描述： | 3.3 2Mx8 / 1Mx16的CMOS同步DRAM |
| 文件頁數(shù)： | 4/15頁 |
| 文件大小： | 265K |
| 代理商： | AS4LC1M16S1 |
AS4LC4M4E0
AS4LC4M4E1
4/11/01; V1.1
Alliance Semiconductor
P. 4 of 15
DC electrical characteristics
Power dissipation
P
D
I
out
–
0.5
W
Short circuit output current
–
50
mA
Parameter
Symbol Test conditions
0V
≤
V
in
≤
+V
CC
(max)
Pins not under test = 0V
D
OUT
disabled, 0V
≤
V
out
≤
+V
CC
(max)
-50
-60
Unit
Notes
Min
Max
Min
Max
Input leakage current
I
IL
-5
+5
-5
+5
μA
Output leakage current
I
OL
-5
+5
-5
+5
μA
Operating power
supply current
I
CC1
CAS
, Address cycling; t
RC
= min
–
120
–
110
mA
1,2
TTL standby power
supply current
I
CC2
RAS
=
CAS
≥
V
IH
–
2.0
–
2.0
mA
Average power supply
current,
RAS
refresh
mode or CBR
I
CC3
RAS
cycling,
CAS
≥
V
IH
,
t
RC
= min of
RAS
low after
CAS
low.
–
120
–
110
mA
1
EDO page mode average
power supply current
I
CC4
RAS
= V
IL
,
CAS,
address cycling: t
HPC
= min
–
90
–
80
mA
1, 2
CMOS standby power
supply current
I
CC5
RAS
=
CAS
= V
CC
- 0.2V
–
1.0
–
1.0
mA
Output voltage
V
OH
V
OL
I
OUT
= -2.0 mA
I
OUT
= 2.0 mA
2.4
–
2.4
–
V
–
0.4
–
0.4
V
CAS
before
RAS
refresh
current
I
CC6
RAS
,
CAS
cycling, t
RC
= min
–
120
–
110
mA
Self refresh current
I
CC7
RAS
=
CAS
≤
0.2V
WE = OE
≥
V
CC
- 0.2V,
all other inputs at 0.2V or
V
CC
- 0.2V
–
0.6
–
0.6
mA
Parameter
Symbol
Min
Max
Unit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS4LC256K16E0-35JC | x16 EDO Page Mode DRAM |
| AS4LC256K16E0-35TC | x16 EDO Page Mode DRAM |
| AS4LC256K16E0-45JC | x16 EDO Page Mode DRAM |
| AS4LC256K16E0-45TC | x16 EDO Page Mode DRAM |
| AS4LC256K16E0-60JC | x16 EDO Page Mode DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4LC1M16S1-10TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 2M × 8/1M × 16 CMOS synchronous DRAM |
| AS4LC1M16S1-12TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 2M x 8/1M x 16 CMOS synchronous DRAM |
| AS4LC1M16S1-7TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 2M × 8/1M × 16 CMOS synchronous DRAM |
| AS4LC1M16S1-8TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 2M × 8/1M × 16 CMOS synchronous DRAM |
| AS4LC256K16E0-35JC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
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