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參數(shù)資料
| 型號： | AS4C256K16E0-35JC |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 5V 256Kx16 CMOS DRAM (EDO) |
| 中文描述： | 256K X 16 EDO DRAM, 35 ns, PDSO40 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-40 |
| 文件頁數(shù)： | 5/24頁 |
| 文件大?。?/td> | 644K |
| 代理商： | AS4C256K16E0-35JC |
AS4C256K16E0
4/11/01; v.1.1
Alliance Semiconductor
5 of 24
Write cycle
Shaded areas contain advance information.
Read-modify-write cycle
Shaded areas contain advance information.
Std
Symbol
Parameter
-30
-35
-50
Unit
Notes
Min
Max
Min
Max
Min
Max
t
ASC
t
CAH
t
AWR
t
WCS
t
WCH
t
WCR
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
DHR
Column address setup time
0
–
0
–
0
–
ns
Column address hold time
5
–
5
–
9
–
ns
Column address hold time to
RAS
26
–
28
–
30
–
ns
Write command setup time
0
–
0
–
0
–
ns
11
Write command hold time
5
–
5
–
9
–
ns
11
Write command hold time to
RAS
26
–
28
–
30
–
ns
Write command pulse width
5
–
5
–
9
–
ns
Write command to
RAS
lead time
10
–
11
–
12
–
ns
Write command to
CAS
lead time
10
–
11
–
12
–
ns
Data-in setup time
0
–
0
–
0
–
ns
12
Data-in hold time
5
–
5
–
9
–
ns
12
Data-in hold time to
RAS
26
–
28
–
30
–
ns
Std
Symbol
Parameter
-30
-35
-50
Unit
Notes
Min
Max
Min
Max
Min
Max
t
RWC
t
RWD
t
CWD
t
AWD
t
RSH(W)
t
CAS(W)
Read-write cycle time
100
–
105
–
120
–
ns
RAS
to
WE
delay time
50
–
54
–
60
–
ns
11
CAS
to
WE
delay time
26
–
28
–
30
–
ns
11
Column address to
WE
delay time
32
–
35
–
40
–
ns
11
CAS
to
RAS
hold time (write)
10
–
10
–
12
–
ns
CAS
pulse width (write)
15
–
15
–
15
–
ns
相關PDF資料 |
PDF描述 |
|---|---|
| AS4C256K16E0-50 | 5V 256Kx16 CMOS DRAM (EDO) |
| AS4C256K16E0-50JC | 5V 256Kx16 CMOS DRAM (EDO) |
| AS4C256K16E0 | 5V 256K×16 CMOS DRAM (EDO)(5V 256K×16 CMOS動態(tài)RAM（擴展數(shù)據(jù)總線）) |
| AS4C256K16FO | 5V 256K × 16 CMOS DRAM (Fast Page Mode)(5V 256K × 16 CMOS動態(tài)RAM（快速頁面模式）) |
| AS4C4M4E1Q | 4M × 4 CMOS QuadCAS DRAM(EDO) Family(4M × 4 CMOS QuadCAS動態(tài)RAM（擴展數(shù)據(jù)總線）) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AS4C256K16E0-45JC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 EDO Page Mode DRAM |
| AS4C256K16E0-50 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256Kx16 CMOS DRAM (EDO) |
| AS4C256K16E050JC | 制造商:Alliance Memory Inc 功能描述: |
| AS4C256K16E0-50JC | 制造商:Alliance Memory Inc 功能描述: 制造商:Alliance Memory Inc 功能描述:Dynamic RAM, EDO, 256K x 16, 40 Pin, Plastic, SOJ |
| AS4C256K16E0-50TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256Kx16 CMOS DRAM (EDO) |
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