參數(shù)資料
型號(hào): AS29LV160T
廠商: Alliance Semiconductor Corporation
英文描述: 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM
中文描述: 3W 200萬(wàn)× 8 / 1米× 16 -閃存EEPROM的CMOS
文件頁(yè)數(shù): 27/29頁(yè)
文件大?。?/td> 561K
代理商: AS29LV160T
8/30/01;
V.0.9.5
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P. 27 of 29
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Test Condition
Output Load
+#
Includesall pnsexcep V
CC
. Test condtions V
CC
= 3.0V onepnat a time
-70, -80
-90, -120
Unit
1 TTL gate
Output Load Capacitance C
L
(including jig capacitance)
Input Rise and Fall Times
30
100
pF
5
ns
Input Pulse Levels
0.0-3.0
V
Input timing measurement reference levels
1.5
V
Output timing measurement reference levels
1.5
V
Parameter
Sector erase and verify-1 time (excludes 00h programming
prior to erase)
Limits
Typical
Unit
Min
Max
-
1.0
15
sec
Programming time
Byte
Word
-
-
-
-
10
15
7.2
300
360
27
-
μs
μs
sec
cycles
Chip programming time
Erase/program cycles
1
1 Erase/program cycle test is not verified on each shipped unit.
100,000
Parameter
Min
Max
Unit
Input voltage with respect to
V
SS
on A9,
OE, and RESET pin
Input voltage with respect to
V
SS
on all DQ, address, and control pins
Current
-1.0
+12.0
V
-0.5
VCC
+0.5
V
-100
+100
mA
F
G
>F
'
H@
I@J
K
I@J
K
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