參數(shù)資料
型號(hào): AS29LV160T
廠商: Alliance Semiconductor Corporation
英文描述: 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM
中文描述: 3W 200萬(wàn)× 8 / 1米× 16 -閃存EEPROM的CMOS
文件頁(yè)數(shù): 21/29頁(yè)
文件大小: 561K
代理商: AS29LV160T
8/30/01;
V.0.9.5
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P. 21 of 29
A
*,#
JEDEC
Symbol
t
AVAV
t
AVQV
t
ELQV
t
GLQV
Std
Symbol Parameter
t
RC
Read cycle time
t
ACC
Address to output delay
t
CE
Chip enable to output
t
OE
Output enable to output
t
OES
Output enable setup time
t
DF
Chip enable to output High Z
t
DF
Output enable to output High Z
Output hold time from addresses,
first occurrence of CE or OE
Output enable hold time: Read
Output enable hold time:
Toggle and data polling
t
RH
RESET high to output delay
t
READY
RESET pin low to read mode
t
RP
RESET pulse
-70
-80
-90
-120
Unit
ns
ns
ns
ns
ns
ns
ns
Min
70
-
-
-
0
-
-
Max
-
70
70
30
-
25
25
Min
80
-
-
-
0
-
-
Max
-
80
80
30
-
25
25
Min
90
-
-
-
0
-
-
Max
-
90
90
35
-
30
30
Min
120
-
-
-
0
-
-
Max
-
120
120
50
-
30
30
t
EHQZ
t
GHQZ
t
AXQX
t
OH
0
-
0
-
0
-
0
-
ns
t
OEH
10
-
10
-
10
-
10
-
ns
10
-
10
-
10
-
10
-
ns
t
PHQV
-
-
50
10
-
-
-
50
10
-
-
-
50
10
-
-
-
50
10
-
ns
μs
ns
500
500
500
500
Addresses stable
Addresses
t
RC
t
ACC
t
OE
t
OEH
t
CE
t
OH
t
DF
CE
OE
WE
Outputs
High Z
High Z
Output valid
t
RH
RESET
t
OES
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