參數(shù)資料
型號(hào)： AS29F040-55LI
廠商： ALLIANCE SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 5V 512K x 8 CMOS FLASH EEPROM
中文描述： 512K X 8 FLASH 5V PROM, 55 ns, PQCC32
封裝： 0.550 X 0.450 INCH, 0.110 INCH HEIGHT, 0.050 INCH PITCH, PLASTIC, MS-016AE, LCC-32
文件頁(yè)數(shù)： 3/18頁(yè)
文件大?。?/td> 341K
代理商： AS29F040-55LI
)
$6
5<
)
373
$
','
#440533440
$
1#728233
#
$//,$1&(
#
6(0,&21'8&725
6
)
0DUFK
#5333
2SHUDWLQJ
#
PRGHV
Mode
ID read MFR code
ID read device code
Read
Standby
Output disable
Write
Enable sector protect
Sector unprotect
Verify sector protect
L = Low (<V
IL
); H = High (>V
IH
); V
ID
= 12.0 ± 0.5V; X = don’t car .
0RGH
#
GHILQLWLRQV
Item
CE
L
L
L
H
L
L
L
L
L
OE
L
L
L
X
H
H
V
ID
V
ID
L
WE
H
H
H
X
H
L
Pulse/L
Pulse/L
H
A0
L
H
A0
X
X
A0
L
L
L
A1
L
L
A1
X
X
A1
H
H
H
A6
L
L
A6
X
X
A6
L
H
L
A9
V
ID
V
ID
A9
X
X
A9
V
ID
V
ID
V
ID
DQ0-DQ7
Code
Code
D
OUT
High Z
High Z
D
IN
X
X
Code
Description
Selected by A9 = V
ID
(11.5–12.5V), CE = OE = A1 = A6 = L, enabling outputs.
When A0 is low (V
IL
) the output data = 52h, a unique Mfr. code for Alliance Semiconductor Flash products.
When A0 is high (V
IH
), D
OUT
represents the device code for the AS29F040.
Selected with CE = OE = L, WE = H. Data is valid in t
ACC
time after addresses are stable, t
CE
after CE is low
and t
OE
after OE is low.
Selected with CE = H. Part is powered down, and I
CC
reduced to <1.0 mA for TTL input levels and <100 μA
for CMOS levels. If activated during an automated on-chip algorithm, the device completes the operation
before entering standby.
Output disable Part remains powered up; but outputs disabled with OE pulled high.
Selected with CE = WE = L, OE = H. Accomplish all Flash erasure and programming through the command
register. Contents of command register serve as inputs to the internal state machine. Address latching occurs
on the falling edge of WE or CE, whichever occurs late . Data latching occurs on the rising edge WE or CE,
whichever occurs first. Filters on WE prevent spurious noise events from appearing as write commands.
Enable
sector protect
disable program and erase operations for specified sectors.
Sector
unprotect
protected prior to sector unprotection.
Verifies write protection for sector. Sectors are protected from program/erase operations on commercial
programming equipment. Determine if sector protection exists in a system by writing the ID read command
sequence and reading location XXX02h, where address bits A16–18 select the defined sector addresses.
A logical 1 on DQ0 indicates a protected sector; a logical 0 indicates an unprotected sector.
ID MFR code,
device code
Read mode
Standby
Write
Hardware protection circuitry implemented with external programming equipment causes the device to
Disables sector protection for all sectors using external programming equipment. All sectors must be
Verify
sector protect
相關(guān)PDF資料
PDF描述
AS29F040-55TC 5V 512K x 8 CMOS FLASH EEPROM
AS29F040-55TI 5V 512K x 8 CMOS FLASH EEPROM
AS29F040-70LC 5V 512K x 8 CMOS FLASH EEPROM
AS29F040-70LI 5V 512K x 8 CMOS FLASH EEPROM
AS29F040-70TC ECONOLINE: REC3-S_DRW(Z)/H4,H6 - Safety standards and approval: EN 60950 certified, rated for 250VAV (LVD test report)- Applied for Ul 1950 Component Recognised Certification- 3W DIP Package- 4kVDC & 6kVDC Isolation- Regulated Output- Continuous Short Circiut Protection Auto-Restarting
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AS29F040-55TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM
AS29F040-55TI 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM
AS29F040-70LC 制造商:Alliance Memory Inc 功能描述:
AS29F040-70LI 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM
AS29F040-70TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*