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參數(shù)資料
| 型號(hào)： | AS29F040-55TC |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 5V 512K x 8 CMOS FLASH EEPROM |
| 中文描述： | 512K X 8 FLASH 5V PROM, 55 ns, PDSO32 |
| 封裝： | 8 X 20 MM, TSOP-32 |
| 文件頁數(shù)： | 1/18頁 |
| 文件大?。?/td> | 341K |
| 代理商： | AS29F040-55TC |
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Organization:512K words × 8 bits
Industrial and commercial temperature
Sector architecture
- Eight 64K byte sectors
- Erase any combination of sectors or full chip
Single 5.0±0.5V power supply for read/write operations
Sector protection
High speed 55/70/90/120/150 ns address access time
Automated on-chip programming algorithm
- Automatically programs/verifies data at specified
address
Automated on-chip erase algorithm
- Automatically preprograms/erases chip or specified
sectors
10,000 write/erase cycle endurance
Low power consumption
- 30 mA maximum read current
- 60 mA maximum program current
- 400 μA typical standby current
JEDEC standard software, packages and pinouts
- 32-pin TSOP
- 32-pin PLCC
Detection of program/erase cycle completion
- DQ7 DATA polling
- DQ6 toggle bit
Erase suspend/resume
- Supports reading data from or programming data to
asector not being erased
Low V
CC
write lock-out below 2.8V
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X decoder
V
CC
V
SS
Cell matr
Y decoder
Y gating
Data latch
Chip enable
Output enable
Logic
A
Input/output
buffers
Sector protect
switches
Command
register
Program/erase
control
V
CC
detector
Erase voltage
generator
Program voltage
generator
Timer
A0–A18
CE
OE
STB
STB
WE
DQ0–DQ7
3LQ
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DUUDQJHPHQW
V
CC
A18
A16
A15
A12
A7
A6
A5
A4
WE
A17
A14
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
A3
A2
A1
A0
DQ0
DQ1
DQ2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
32-pin TSOP
32-pin PLCC
1
2
32
31
30
4
3
29
28
27
26
25
24
23
21
A7
A6
A5
A4
A3
A2
A1
DQ0
V
SS
DQ4
DQ6
DQ1
22
5
6
7
8
9
10
11
13
12
17
16
18
19
20
14
15
DQ2
DQ3
DQ5
A0
A14
A13
A8
A9
A11
OE
A10
DQ7
CE
A16
V
CC
A17
A12
A15
A18
WE
AS29F040
AS29F040
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AS29F040-55
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AA
55
t
CE
55
t
OE
25
AS29F040-70
70
70
30
AS29F040-90
90
90
35
AS29F040-120 AS29F040-150 Unit
120
150
120
150
50
55
Maximum access time
Maximum chip enable access time
Maximum output enable access time
ns
ns
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS29F040-55TI | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-70LC | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-70LI | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-70TC | ECONOLINE: REC3-S_DRW(Z)/H4,H6 - Safety standards and approval: EN 60950 certified, rated for 250VAV (LVD test report)- Applied for Ul 1950 Component Recognised Certification- 3W DIP Package- 4kVDC & 6kVDC Isolation- Regulated Output- Continuous Short Circiut Protection Auto-Restarting |
| AS29F040-70TI | 5V 512K x 8 CMOS FLASH EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS29F040-55TI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-70LC | 制造商:Alliance Memory Inc 功能描述: |
| AS29F040-70LI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-70TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-70TI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
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