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參數(shù)資料
| 型號： | AS29F040-150LI |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 5V 512K x 8 CMOS FLASH EEPROM |
| 中文描述： | 512K X 8 FLASH 5V PROM, 150 ns, PQCC32 |
| 封裝： | 0.550 X 0.450 INCH, 0.110 INCH HEIGHT, 0.050 INCH PITCH, PLASTIC, MS-016AE, LCC-32 |
| 文件頁數(shù)： | 9/18頁 |
| 文件大小： | 341K |
| 代理商： | AS29F040-150LI |
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DOJRULWKP
*
VA = Byte address for programming. VA = any of the sector addresses
within the sector being erased during sector erase. VA = valid address
equals any non-protected sector group address during chip erase.
DQ7 rechecked even if DQ5 = 1 because DQ5 and DQ7 may not change
simultaneously.
7RJJOH
#
ELW
#
DOJRULWKP
*
DQ6 rechecked even if DQ5 = 1 because DQ6 may stop toggling when
DQ5 changes to 1.
Readbyte(DQ0–DQ7)
Address= VA
*
Readbyte(DQ0–DQ7)
Address
=
VA
*
NO
DONE
NO
NO
YES
YES
YES
DONE
DQ7 =
data
YES
NO
Istime
eapsed= 1ms
DONE
START
IssueRese/read
command
Addr = X
Data= F0h
DQ5 = 1
DQ7 =
data
Readbyte(DQ0–DQ7)
twotimeswthOE toggling
Address= dont care
Readbyte(DQ0–DQ7)
twotimeswthOE toggling
Address= dont care
NO
DONE
YES
YES
YES
NO
NO
DONE
Does
toggle
togge
*
DQ5 = 1
START
Does
DONE
IssueRese/read
command
Addr = X
Data= F0h
相關PDF資料 |
PDF描述 |
|---|---|
| AS29F040-150T | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-55LC | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-55LI | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-55TC | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-55TI | 5V 512K x 8 CMOS FLASH EEPROM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AS29F040-150T | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-150TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-55LC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-55LI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-55TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
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