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參數(shù)資料
| 型號(hào)： | AS192-000 |
| 英文描述： | AS192-000:PHEMT GaAs IC High Power SP4T Switch 0.1|DC-6 GHz Plastic Packaged and Chip|SPST |
| 中文描述： | AS192 - 000：PHEMT的砷化鎵集成電路大功率SP4T開關(guān)0.1 |直流- 6 GHz的塑料包裝和芯片|聚苯乙烯 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 53K |
| 代理商： | AS192-000 |
Skyworks Solutions, Inc.
[978] 241-7000
Fax
[978] 241-7906
Email
sales@skyworksinc.com
www.skyworksinc.com
Specifications subject to change without notice. 10/02A
1
PHEMT GaAs IC High Power
SP4T Switch 0.1–2.5 GHz
Features
■
4 Symmetric RF Paths
■
Positive Voltage Control
■
High IP3
■
Excellent Harmonic Performance
■
Handles GSM Power Levels
■
Available in 100% RF Tested Chip Form
Outline Drawing
AS192-000
V
4
J
4
J
3
V
3
V
2
J
2
J
1
V
1
ANT
0.0417 (1.06 mm)
0.0387 (0.98 mm)
0.0261 (0.66 mm)
0.0209 (0.53 mm)
0.0156 (0.40 mm)
0.0030 (0.08 mm)
0.0000 (0.00 mm)
0
0
0
0
0
0
Description
The AS192-000 is a reflective SP4T switch. It is an ideal
switch for higher power applications. It can be used for
GSM dual-band handset applications where both low loss,
low current and small size are critical parameters.
Parameter
Frequency
0.1–0.5 GHz
0.5–1.0 GHz
1.0–2.0 GHz
2.0–2.5 GHz
0.1–0.5 GHz
0.5–1.0 GHz
1.0–2.0 GHz
2.0–2.5 GHz
0.1–1.0 GHz
1.0–2.5 GHz
Min.
Typ.
0.90
0.95
1.00
1.10
34
29
23
21
1.3:1
1.4:1
Max.
1.1
1.1
1.2
1.3
Unit
dB
dB
dB
dB
dB
dB
dB
dB
Insertion Loss
Ant-J
1
, J
2
, J
3
, J
4
Isolation
Ant-J
1
, J
2
, J
3
, J
4
30
25
19
18
VSWR
Electrical Specifications at 25°C (0, +4.5 V)
Parameter
Condition
Frequency
Min.
Typ.
50
100
50
+55
+65
Max.
Unit
ns
ns
mV
dBm
dBc
Switching Characteristics
Rise, Fall (10/90% or 90/10% RF)
On, Off (50% CTL to 90/10% RF)
Video Feedthru
13 dBm/Tone
34 dBm Input 900 MHz
V
Low
= 0
V
High
= +4.5 V @ 200
μ
A Max. for RF power > 30 dBm
V
High
= +3.0 V @ 200
μ
A Max. for RF power 20–30 dBm
V
High
= +2.7 V @ 200
μ
A Max. for RF power < 20 dBm
IP3
2nd and 3rd Harmonics
Control Voltages
Operating Characteristics at 25°C (0, +4.5 V)
Chip thickness 0.008 ± 0.001 (0.203 ± 0.025).
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