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參數(shù)資料
| 型號(hào)： | AS197-306 |
| 英文描述： | AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S|DC-6 GHz Plastic Packaged and Chip|SPST |
| 中文描述： | AS197 - 306：PHEMT的砷化鎵集成電路高功率SP2T和SP3T秒|的DC - 6GHz的塑料包裝和芯片|聚苯乙烯 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 423K |
| 代理商： | AS197-306 |
Skyworks Solutions, Inc.
[781] 376-3000
Fax
[781] 376-3100
Email
sales@skyworksinc.com
www.skyworksinc.com
Specifications subject to change without notice. 9/03A
1
GaAs FETs as Control Devices
Gallium arsenide MESFETs are being used in RF control
device applications as switches and attenuators.They are
very easily adapted to monolithic circuit form, dissipate
essentially no power and can easily be designed into
broadband circuits.
The RF signal flows from source to drain, while the RF
isolated gate is the voltage control.The high impedance
“off state”is attained by applying a DC voltage on the gate
more negative than the “pinch-off” voltage (V
P
). In this
condition the source-drain channel is “pinched off.” The
capacitance is typically 0.25 pF per mm of gate
periphery (see Figure 1A). The “on” state occurs when
zero DC bias is applied to the gate (see Figure 1B).The
channel from source to drain is “open” and represents a
2.5–3.5
resistance per mm of gate periphery.
A configuration of FETs used in series and shunt normally
produce the optimum switch or attenuator performance in
monolithic circuits (see Figure 2).The only DC current that
flows is the leakage of the gate-source and gate-drain
reverse biased junctions (when negative voltage is applied
to gate). Typical current drain is < 25 μA @ -5 V. This
leakage is a function of the wafer fabrication process, the
device periphery, and magnitude of applied voltage. For
isolation of gate voltage control, 2.5–5 k
resistor is
incorporated monolithically in the gate. Since no further
external bias circuitry is required, the switch is inherently
broadband.
The power handling of the switches is primarily limited by
the current handling capability, which is related to the IDSS
of the FET.The IDSS is a function of the gate periphery
which then determines the source-drain capacitance.
The input series FET in switches have a nominal 1 dB
compression of 1 W/mm.
Digital attenuators use FETs configured as “T”or “PI”pads
to achieve a given attenuation value (Figure 3).For the low
loss state V
2
is set to 0 V and V
1
is set to -5 V. For the
attenuation state V
2
is set to -5 V and V
1
is set to 0 V.
Typically digital attenuators are composed of multiple bit
values (e.g. 2, 4, 8, 16 dB AD220-25).
APN2015
Voltage variable attenuators (VVAs) use the channel
resistance of the FET as the actual resistance of the circuit
components. The resistance is a nonlinear relationship
with control voltage as shown in Figure 4 (FET with a
“pinch-off” voltage of 1.5 V). Figure 5 shows a TEE VVA
that uses two series FETs and one shunt FET.
Source
5 k
Gate
Drain
-5 V
N
SI
Figure 1A. MESFET Control Device in
High Impedance State (“Off” State)
Source
5 k
Gate
Drain
0 V
N
SI
Figure 1B. MESFET Control Device in
Low Impedance State (“On” State)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS197-306LF | 制造商:SKYWORKS 制造商全稱:SKYWORKS 功能描述:PHEMT GaAs IC High-Power SP2T and SP3T Switch 0.1-2.5 GHz |
| AS1973-T | 功能描述:IC COMPARATOR DUAL O-D 8-MSOP RoHS:是 類別:集成電路 (IC) >> 線性 - 比較器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:2,500 系列:- 類型:通用 元件數(shù):1 輸出類型:CMOS，推挽式，滿擺幅，TTL 電壓 - 電源，單路/雙路(±):2.5 V ~ 5.5 V，±1.25 V ~ 2.75 V 電壓 - 輸入偏移（最小值）:5mV @ 5.5V 電流 - 輸入偏壓（最小值）:1pA @ 5.5V 電流 - 輸出（標(biāo)準(zhǔn)）:- 電流 - 靜態(tài)（最大值）:24µA CMRR, PSRR（標(biāo)準(zhǔn)）:80dB CMRR，80dB PSRR 傳輸延遲（最大）:450ns 磁滯:±3mV 工作溫度:-40°C ~ 85°C 封裝/外殼:6-WFBGA，CSPBGA 安裝類型:表面貼裝 包裝:管件 其它名稱:Q3554586 |
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