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參數(shù)資料
| 型號(hào)： | APTM50TDUM65P |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 51 A, 500 V, 0.065 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-21 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 315K |
| 代理商： | APTM50TDUM65P |
APTM50TDUM65P
A
P
T
M
50T
D
U
M
65P
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R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
500
V
VGS = 0V,VDS = 500V
Tj = 25°C
250
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 25.5A
65
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
7000
Coss
Output Capacitance
1400
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
90
pF
Qg
Total gate Charge
140
Qgs
Gate – Source Charge
40
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 51A
70
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
38
Td(off)
Turn-off Delay Time
75
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 51A
RG = 3
93
ns
Eon
Turn-on Switching Energy
1035
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 51A, RG = 3
845
J
Eon
Turn-on Switching Energy
1556
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 51A, RG = 3
1013
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
51
IS
Continuous Source current
(Body diode)
Tc = 80°C
38
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 51A
1.3
V
dv/dt
Peak Diode Recovery
8
V/ns
trr
Reverse Recovery Time
Tj = 25°C
700
ns
Qrr
Reverse Recovery Charge
IS = - 51A
VR = 250V
diS/dt = 100A/s
Tj = 25°C
15.4
C
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 51A
di/dt
≤ 700A/s
VR ≤ VDSS
Tj ≤ 150°C
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