參數(shù)資料
型號(hào)： APTM50SKM17G
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類(lèi)： JFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 180 A, 500 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SP6, 5 PIN
文件頁(yè)數(shù)： 6/7頁(yè)
文件大?。?/td> 284K
代理商： APTM50SKM17G
APTM50SKM17G
A
www.microsemi.com
6 – 7
Delay Times vs Current
td(on)
td(off)
10
20
30
40
50
60
70
80
40
80
120
160
200
240
280
I
D
, Drain Current (A)
t
d
d
V
DS
=333V
R
G
=0.5
T
J
=125°C
L=100μH
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
140
160
40
80
120
160
200
240
280
I
D
, Drain Current (A)
t
r
f
V
DS
=333V
R
G
=0.5
T
J
=125°C
L=100μH
Switching Energy vs Current
E
on
E
off
0
2
4
6
8
10
12
40
80
120
160
200
240
280
I
D
, Drain Current (A)
S
V
DS
=333V
R
G
=0.5
T
J
=125°C
L=100μH
E
on
E
off
E
off
0
4
8
12
16
20
0
2.5
5
7.5
10
12.5
Gate Resistance (Ohms)
S
Switching Energy vs Gate Resistance
V
DS
=333V
I
D
=180A
T
J
=125°C
L=100μH
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
450
20
40
60
80
100 120 140 160
I
D
, Drain Current (A)
F
Operating Frequency vs Drain Current
V
DS
=333V
D=50%
R
G
=0.5
T
J
=125°C
T
C
=75°C
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
V
SD
, Source to Drain Voltage (V)
1
1.2 1.4 1.6 1.8
I
D
,
Source to Drain Diode Forward Voltage
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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