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參數(shù)資料
| 型號： | APTM50HM75SCT |
| 元件分類： | JFETs |
| 英文描述： | 46 A, 500 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-14 |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 326K |
| 代理商： | APTM50HM75SCT |
APTM50HM75SCT
A
PT
M
50H
M
75S
C
T
–
R
ev
1
M
ay
,2004
APT website – http://www.advancedpower.com
6 – 7
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
10
20
30
40
50
60
70
ID, Drain Current (A)
t d(
on)
an
d
t
d(
of
f)(n
s
)
VDS=333V
RG=5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
10
20
30
40
50
60
70
ID, Drain Current (A)
t r
an
d
t
f(n
s
)
VDS=333V
RG=5
TJ=125°C
L=100H
0
50
100
150
200
250
300
350
400
10
15
20
25
30
35
40
ID, Drain Current (A)
F
req
ue
nc
y
(
k
H
z)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=5
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,Re
v
ers
eDra
in
Cu
rre
n
t(A)
Source to Drain Diode Forward Voltage
Switching Energy vs Current
Eon
Eoff
0
0.4
0.8
1.2
1.6
2
10
20
30
40
50
60
70
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
VDS=333V
RG=5
TJ=125°C
L=100H
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1020304050
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=333V
ID=46A
TJ=125°C
L=100H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM50HM75SCT | 46 A, 500 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50HM75STG | 46 A, 500 V, 0.09 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50SKM19 | 163 A, 500 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM50SKM19 | 163 A, 500 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM50SKM35T | 99 A, 500 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
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