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參數(shù)資料
| 型號(hào)： | APTM50HM75SCT |
| 元件分類： | JFETs |
| 英文描述： | 46 A, 500 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-14 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 326K |
| 代理商： | APTM50HM75SCT |
APTM50HM75SCT
A
PT
M
50H
M
75S
C
T
–
R
ev
1
M
ay
,2004
APT website – http://www.advancedpower.com
4 – 7
Typical MOSFET Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
er
m
a
lI
m
pe
da
nc
e
(°
C
/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5.5V
6V
6.5V
7V
7.5V
8V
0
20
40
60
80
100
120
140
160
180
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t
(A)
VGS=10&15V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
20
40
60
80
100
120
012345678
VGS, Gate to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t
(A)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
0
20406080
100
ID, Drain Current (A)
R
DS
(o
n)
D
rai
n
t
o
So
ur
ce
O
N
R
esi
st
an
ce
Normalized to
VGS=10V @ 23A
0
10
20
30
40
50
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,
DC
Dra
in
Cu
rre
n
t(A)
DC Drain Current vs Case Temperature
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM50HM75SCT | 46 A, 500 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50HM75STG | 46 A, 500 V, 0.09 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50SKM19 | 163 A, 500 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM50SKM19 | 163 A, 500 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM50SKM35T | 99 A, 500 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
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