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參數(shù)資料
| 型號： | APTM50HM75FT3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | Full - Bridge MOSFET Power Module |
| 中文描述： | 46 A, 500 V, 0.09 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 310K |
| 代理商： | APTM50HM75FT3G |
APTM50HM75FT3G
A
www.microsemi.com
2 – 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
V
GS
= 0V,V
DS
= 500V
V
GS
= 0V,V
DS
= 400V
V
GS
= 10V, I
D
= 23A
V
GS
= V
DS
, I
D
= 2.5mA
V
GS
= ±30
V, V
DS
= 0V
Min
3
Typ
75
Max
100
500
90
5
±100
Unit
T
j
= 25°C
T
j
= 125°C
I
DSS
Zero Gate Voltage Drain Current
μA
R
DS(on)
V
GS(th)
I
GSS
Dynamic Characteristics
Symbol Characteristic
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q
g
Total gate Charge
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
m
V
nA
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min
Typ
5600
1200
90
123
Max
Unit
pF
Q
gs
Q
gd
Gate – Source Charge
33
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 250V
I
D
= 46A
65
nC
T
d(on)
T
r
T
d(off)
T
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
18
35
87
77
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 333V
I
D
= 46A
R
G
= 5
ns
E
on
Turn-on Switching Energy
755
E
off
Turn-off Switching Energy
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 333V
I
D
= 46A,
R
G
= 5
726
μJ
E
on
Turn-on Switching Energy
1241
E
off
Turn-off Switching Energy
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 333V
I
D
= 46A,
R
G
= 5
846
μJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
I
S
Continuous Source current
(Body diode)
V
SD
Diode Forward Voltage
dv/dt
Peak Diode Recovery
X
Test Conditions
Min
Typ
233
499
1.9
5.7
Max
46
34
1.3
15
Unit
Tc = 25°C
Tc = 80°C
A
V
GS
= 0V, I
S
= - 46A
V
V/ns
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
t
rr
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
I
S
= - 46A
V
R
= 333V
di
S
/dt = 100A/μs
μC
X
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
≤
- 46A di/dt
≤
700A/μs V
R
≤
V
DSS
T
j
≤
150°C
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