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參數(shù)資料
| 型號： | APTM50HM65FTG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | Full - Bridge MOSFET Power Module |
| 中文描述： | 51 A, 500 V, 0.078 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP4, 14 PIN |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 302K |
| 代理商： | APTM50HM65FTG |
APTM50HM65FTG
A
www.microsemi.com
6 – 6
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.2
0.4
V
SD
, Source to Drain Voltage (V)
0.6
0.8
1
1.2
1.4
1.6
I
D
,
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
10
20
30
40
50
60
70
80
10
20
30
I
D
, Drain Current (A)
40
50
60
70
80
t
d
d
V
DS
=333V
R
G
=3
T
J
=125°C
L=100μH
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
140
160
10
20
30
I
D
, Drain Current (A)
40
50
60
70
80
t
r
f
V
DS
=333V
R
G
=3
T
J
=125°C
L=100μH
Switching Energy vs Current
E
on
E
off
0
0.5
1
1.5
2
2.5
3
10
20
30
40
50
60
70
80
I
D
, Drain Current (A)
S
V
DS
=333V
R
G
=3
T
J
=125°C
L=100μH
E
on
E
off
E
off
0
1
2
3
4
5
0
5
10
15
20
25
30
35 40
45
Gate Resistance (Ohms)
S
Switching Energy vs Gate Resistance
V
DS
=333V
I
D
=51A
T
J
=125°C
L=100μH
hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
450
10
15
20
I
D
, Drain Current (A)
25
30
35
40
45
F
Operating Frequency vs Drain Current
V
DS
=333V
D=50%
R
G
=3
T
J
=125°C
T
C
=75°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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| APTM50HM75FT | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
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| APTM50HM75FTG | 功能描述:MOSFET MODULE FULL BRIDGE SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM50HM75SCT | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full bridge Series & SiC parallel diodes MOSFET Power Module |
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