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參數(shù)資料
| 型號： | APTM50HM35FG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 99 A, 500 V, 0.039 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP6, 12 PIN |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 287K |
| 代理商： | APTM50HM35FG |
APTM50HM35FG
A
P
T
M
50H
M
35F
G
–
R
ev
2
J
ul
y,
2006
www.microsemi.com
6 – 6
Delay Times vs Current
td(on)
td(off)
10
20
30
40
50
60
70
80
0
20
40
60
80 100 120 140 160
ID, Drain Current (A)
t d(
on)
a
nd
t
d(
o
ff
)(n
s
)
VDS=333V
RG=1
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
0
20
40
60
80 100 120 140 160
ID, Drain Current (A)
t r
a
nd
t f(n
s
)
VDS=333V
RG=1
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
6
0
20
40
60
80 100 120 140 160
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
VDS=333V
RG=1
TJ=125°C
L=100H
Eon
Eoff
0
2
4
6
8
10
0
5
10
15
20
25
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=333V
ID=99A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
450
10
20 30
40 50
60
70 80
90
ID, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=1
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
e
n
t(
A
)
Source to Drain Diode Forward Voltage
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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| APTM50HM65FT3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM50HM65FT3G | 功能描述:MOSFET MOD FULL BRIDGE 500V SP3 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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