- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄64116 > APTM50HM35FG (MICROSEMI POWER PRODUCTS GROUP) 99 A, 500 V, 0.039 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APTM50HM35FG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 99 A, 500 V, 0.039 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP6, 12 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 287K |
| 代理商： | APTM50HM35FG |
APTM50HM35FG
A
P
T
M
50H
M
35F
G
–
R
ev
2
J
ul
y,
2006
www.microsemi.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 500V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 49.5A
35
39
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
14
Coss
Output Capacitance
2.8
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.2
nF
Qg
Total gate Charge
280
Qgs
Gate – Source Charge
80
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 99A
140
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
38
Td(off)
Turn-off Delay Time
75
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 99A
RG = 1
93
ns
Eon
Turn-on Switching Energy
2070
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 99A, RG = 1
1690
J
Eon
Turn-on Switching Energy
3112
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 99A, RG = 1
2026
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
99
IS
Continuous Source current
(Body diode)
Tc = 80°C
74
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 99A
1.3
V
dv/dt
Peak Diode Recovery
15
V/ns
Tj = 25°C
270
trr
Reverse Recovery Time
Tj = 125°C
540
ns
Tj = 25°C
5.2
Qrr
Reverse Recovery Charge
IS = - 99A
VR = 333V
diS/dt = 200A/s
Tj = 125°C
19.2
C
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 99A
di/dt
≤ 700A/s
VR ≤ VDSS
Tj ≤ 150°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM50HM38F | 90 A, 500 V, 0.038 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50HM38F | 90 A, 500 V, 0.038 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| AQ-24 | 2000 MHz - 4000 MHz, 0 deg - 360 deg RF/MICROWAVE DIGITALLY CONTROLLED PH SHFTR |
| AQ-26 | 2000 MHz - 6000 MHz, 0 deg - 360 deg RF/MICROWAVE DIGITALLY CONTROLLED PH SHFTR |
| AQ-42 | 4000 MHz - 12000 MHz, 0 deg - 360 deg RF/MICROWAVE DIGITALLY CONTROLLED PH SHFTR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM50HM38F | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM50HM38FG | 功能描述:MOSFET MODULE FULL BRIDGE SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM50HM65FT | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM50HM65FT3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM50HM65FT3G | 功能描述:MOSFET MOD FULL BRIDGE 500V SP3 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標準包裝:10 系列:* |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。