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參數(shù)資料
| 型號： | APTM50H14FT3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | Full - Bridge MOSFET Power Module |
| 中文描述： | 26 A, 500 V, 0.168 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 310K |
| 代理商： | APTM50H14FT3G |
APTM50H14FT3G
A
www.microsemi.com
6 - 6
Delay Times vs Current
td(on)
td(off)
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I
D
, Drain Current (A)
t
d
d
V
DS
=333V
R
G
=5
T
J
=125°C
L=100μH
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
0
10
20
30
40
50
60
I
D
, Drain Current (A)
t
r
f
V
DS
=333V
R
G
=5
T
J
=125°C
L=100μH
Hard
switching
ZCS
ZVS
0
100
200
300
400
500
600
5
10
15
20
25
I
D
, Drain Current (A)
F
Operating Frequency vs Drain Current
V
DS
=333V
D=50%
R
G
=5
T
J
=125°C
T
C
=75°C
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.2
0.4 0.6 0.8
V
SD
, Source to Drain Voltage (V)
1
1.2 1.4 1.6
1.8
I
D
,
Source to Drain Diode Forward Voltage
Switching Energy vs Current
E
on
E
off
0
0.2
0.4
0.6
0.8
1
1.2
0
10
20
30
40
50
60
I
D
, Drain Current (A)
S
V
DS
=333V
R
G
=5
T
J
=125°C
L=100μH
E
on
E
off
E
off
0
0.5
1
1.5
0
10
20
30
40
50
Gate Resistance (Ohms)
S
Switching Energy vs Gate Resistance
V
DS
=333V
I
D
=26A
T
J
=125°C
L=100μH
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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